Productos semiconductores discretos - Diodos - Rectificadores - Sencillos
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 1KV 8A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 1KV 8A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 1KV 8A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 200V 3A DO214AB
Descripción
Vishay Semiconductor Diodes Division
Fabricantes
DIODE GEN PURP 600V 1.6A DO221BC
Descripción
Vishay Semiconductor Diodes Division
Fabricantes
DIODE GEN PURP 600V 1.6A DO221BC
Descripción
Vishay Semiconductor Diodes Division
Fabricantes
DIODE GEN PURP 600V 1.6A DO221BC
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 400V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 400V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 400V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 600V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 600V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 600V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 800V 10A DO214AB
Descripción
Taiwan Semiconductor Corporation
Fabricantes
DIODE GEN PURP 800V 10A DO214AB
Descripción