AS4C16M16D1-5TCN

Product Overview

Category

AS4C16M16D1-5TCN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data access and storage capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact form factor for easy integration into different devices

Package

AS4C16M16D1-5TCN is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C16M16D1-5TCN lies in its ability to provide efficient and reliable data storage and retrieval functions for electronic devices.

Packaging/Quantity

AS4C16M16D1-5TCN is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR4 SDRAM
• Capacity: 16 Megabytes x 16 bits
• Speed Grade: PC4-4000 (DDR4-500)
• Operating Voltage: 1.2V
• Organization: 16M words x 16 bits
• Refresh: Auto-refresh and self-refresh modes supported
• CAS Latency: CL19
• Burst Length: 8
• Interface: 260-pin SODIMM

Detailed Pin Configuration

The pin configuration of AS4C16M16D1-5TCN is as follows:

1. VSS (Ground)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. VSS (Ground)
7. DQ4 (Data Input/Output Bit 4)
8. DQ5 (Data Input/Output Bit 5)
9. DQ6 (Data Input/Output Bit 6)
10. DQ7 (Data Input/Output Bit 7)
11. VSS (Ground)
12. DQ8 (Data Input/Output Bit 8)
13. DQ9 (Data Input/Output Bit 9)
14. DQ10 (Data Input/Output Bit 10)
15. DQ11 (Data Input/Output Bit 11)
16. VSS (Ground)
17. DQ12 (Data Input/Output Bit 12)
18. DQ13 (Data Input/Output Bit 13)
19. DQ14 (Data Input/Output Bit 14)
20. DQ15 (Data Input/Output Bit 15)
21. VSS (Ground)
22. DQM0 (Data Mask Bit 0)
23. DQM1 (Data Mask Bit 1)
24. VCC (Power Supply)
25. VREFCA (Reference Voltage for Address and Command)
26. VSS (Ground)
27. BA0 (Bank Address Bit 0)
28. BA1 (Bank Address Bit 1)
29. RAS# (Row Address Strobe)
30. CAS# (Column Address Strobe)
31. WE# (Write Enable)
32. CS# (Chip Select)
33. VSS (Ground)
34. CK0 (Clock Input)
35. CK1 (Clock Input)
36. VSS (Ground)
37. CKE (Clock Enable)
38. ODT (On-Die Termination)
39. VCC (Power Supply)
40. VSS (Ground)

Functional Features

• High-speed data transfer rate for improved system performance
• Low power consumption for energy efficiency
• Automatic refresh and self-refresh modes for data integrity
• Error correction code (ECC) support for enhanced reliability
• Compatibility with various operating systems and platforms

Advantages

• Fast read and write operations improve overall system responsiveness
• Large storage capacity allows for efficient multitasking and data-intensive applications
• Compact form factor enables easy integration into space-constrained devices
• Low power consumption helps prolong battery life in portable devices
• ECC support enhances data integrity and reduces the risk of errors

Disadvantages

• Volatile memory requires constant power supply, leading to potential data loss during power outages or system failures
• Relatively higher cost compared to other types of memory modules
• Limited scalability in terms of maximum capacity compared to other memory technologies

Working Principles

AS4C16M16D1-5TCN operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors within its memory cells. To