IS29GL256S-10DHV010

Product Overview

Category

IS29GL256S-10DHV010 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL256S-10DHV010 offers a storage capacity of 256 gigabits (32 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory device ensures quick and efficient data read and write operations.
• Reliable performance: The IS29GL256S-10DHV010 is known for its high reliability and durability, making it suitable for long-term use.
• Low power consumption: This flash memory device is designed to consume minimal power, contributing to energy efficiency in electronic devices.
• Compact package: The IS29GL256S-10DHV010 comes in a small form factor, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL256S-10DHV010 is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: IS29GL256S-10DHV010
• Memory Type: Flash
• Capacity: 256 gigabits (32 gigabytes)
• Speed Rating: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL256S-10DHV010 has a pin configuration as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. DQ8
43. DQ9
44. DQ10
45. DQ11
46. DQ12
47. DQ13
48. DQ14
49. DQ15
50. WE#
51. CE#
52. OE#
53. BYTE#
54. RY/BY#
55. RESET#
56. WP#
57. VSS

Functional Features

• High-speed data transfer: The IS29GL256S-10DHV010 offers fast read and write operations, enabling quick access to stored data.
• Erase and program capability: This flash memory device supports both sector erase and byte programming functions, allowing for flexible data manipulation.
• Reliable data retention: The IS29GL256S-10DHV010 ensures data integrity and long-term retention, making it suitable for critical applications.
• Compatibility: This flash memory device is designed to be compatible with various microcontrollers and interface standards, ensuring seamless integration into different systems.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: Flash memory devices have a limited number of erase/write cycles before they may start to degrade.
• Higher cost compared to other types of memory: Flash memory tends to be more expensive per unit of storage compared to traditional hard drives or solid-state drives.

Working Principles

The IS29GL256S-10DHV010 utilizes the principles of NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. These charges represent binary information (0s and 1s) and can be read, erased, or programmed using specific voltage levels applied to the memory cells.

Detailed Application Field Plans

The IS29GL256S-10DHV010 finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital