S29GL01GS10FHSS20

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Surface mount package
• Essence: Non-volatile memory solution for various electronic applications
• Packaging/Quantity: Available in reels or trays, quantity depends on customer requirements

Specifications

• Model: S29GL01GS10FHSS20
• Capacity: 1 Gigabit (128 Megabytes)
• Interface: Parallel
• Voltage: 3.0V - 3.6V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Package Type: 48-ball Fine-pitch BGA

Detailed Pin Configuration

The S29GL01GS10FHSS20 has a 48-ball Fine-pitch BGA package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. OE#
48. VSS

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase capability for flexible data management
• Built-in error correction codes (ECC) for data integrity
• Advanced security features to protect stored data
• Compatibility with various microcontrollers and systems

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even when power is lost - Reliable and durable - Suitable for a wide range of applications

Disadvantages: - Higher cost compared to other memory solutions - Limited endurance (number of erase/write cycles) - Requires specialized programming equipment for initial setup

Working Principles

The S29GL01GS10FHSS20 utilizes flash memory technology, which is a type of non-volatile memory that can retain data even without power. It stores information in memory cells made of floating-gate transistors. These transistors can be electrically programmed and erased using specific voltage levels.

During read operations, the memory controller sends an address to the flash memory, which retrieves the corresponding data from the memory cells. Write operations involve erasing a sector or block of memory and then programming new data into the desired location.

Detailed Application Field Plans

The S29GL01GS10FHSS20 is widely used in various electronic devices and systems, including:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Networking equipment
6. Medical devices
7. Telecommunications devices

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. S29GL512S10FHSS20 - 512 Megabit (64 Megabytes) capacity, same specifications as S29GL01GS10FHSS20
2. S29GL02GS10FHSS20 - 2 Gigabit (256 Megabytes) capacity, same specifications as S29GL01GS10FHSS20
3. S29GL04GS10FHSS20 - 4 Gigabit (512 Megabytes) capacity, same specifications as S29GL01GS10FHSS20

These alternative models offer different storage capacities while maintaining the same functionality and pin configuration as the S29GL01GS10FHSS20.

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