S29GL032N90BFVR40

Product Overview

Category

S29GL032N90BFVR40 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 32 gigabits (4 gigabytes) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Can function reliably in extreme temperature conditions.

Package

The S29GL032N90BFVR40 is available in a compact and durable package, designed to protect the memory chip from external elements and physical damage.

Essence

The essence of S29GL032N90BFVR40 lies in its ability to provide reliable and high-capacity storage for electronic devices, ensuring efficient data management and retrieval.

Packaging/Quantity

This product is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities for industrial applications.

Specifications

• Manufacturer: Cypress Semiconductor
• Model: S29GL032N90BFVR40
• Memory Type: NOR Flash
• Memory Capacity: 32 gigabits (4 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-pitch Ball Grid Array)
• Pin Count: 64 pins

Detailed Pin Configuration

The pin configuration of S29GL032N90BFVR40 is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Reset/Byte#)
8. RY/BY# (Ready/Busy#)
9. VSS (Ground)

Functional Features

• High-speed read and write operations
• Sector erase and program operations
• Block erase and program operations
• Chip erase operation
• Hardware data protection
• Software data protection
• Automatic sleep mode for power saving
• Error correction code (ECC) support

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access speeds
• Low power consumption
• Wide operating temperature range
• Reliable data retention
• Hardware and software data protection mechanisms

Disadvantages

• Higher cost compared to lower-capacity flash memory options
• Limited endurance (number of erase/write cycles)
• Requires additional circuitry for interfacing with the host device

Working Principles

S29GL032N90BFVR40 operates based on the principles of NOR flash memory technology. It utilizes a grid of memory cells, where each cell stores a binary value (0 or 1) by trapping or releasing electric charge. The stored data can be accessed by applying appropriate voltage levels to the address and control pins.

Detailed Application Field Plans

The S29GL032N90BFVR40 is widely used in various electronic devices that require high-capacity and reliable data storage. Some common application fields include:

1. Mobile devices: Smartphones, tablets, and portable media players.
2. Digital cameras: Used for storing photos and videos.
3. Automotive electronics: Infotainment systems, navigation units, and instrument clusters.
4. Industrial equipment: Embedded systems, control units, and data loggers.
5. Consumer electronics: Gaming consoles, set-top boxes, and audio players.

Detailed and Complete Alternative Models

1. S29GL064N90TFI040: 64 gigabit (8 gigabyte) capacity, parallel interface, extended temperature range.
2. S29GL128N10FFI010: 128 gigabit (16 gigabyte) capacity, parallel interface, industrial temperature range.
3. S29GL256P11TFI020: 256 gigabit (32 gigabyte) capacity, parallel interface, extended temperature range.

These alternative models offer higher storage capacities and may have different specifications to cater to specific application requirements.

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