Cypress Semiconductor Corp
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S29GL256N11TFIV20
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S29GL256N11TFIV20

Basic Information Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High-speed read and write operations
    • Large storage capacity
    • Low power consumption
  • Package: Integrated Circuit (IC)
  • Essence: Provides reliable and efficient data storage solution for various electronic devices
  • Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

  • Capacity: 256 Megabits (32 Megabytes)
  • Organization: 32 Megabit x 8-bit
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Access Time:
    • Random Read: 70 ns
    • Page Program: 2 ms
    • Block Erase: 2 ms
  • Endurance: 100,000 program/erase cycles
  • Data Retention: 20 years

Detailed Pin Configuration

The S29GL256N11TFIV20 has a total of 48 pins. The pin configuration is as follows:

  1. VCC (Power Supply)
  2. A0-A18 (Address Inputs)
  3. DQ0-DQ7 (Data Inputs/Outputs)
  4. WE# (Write Enable)
  5. CE# (Chip Enable)
  6. OE# (Output Enable)
  7. RP#/BYTE# (Reset/Byte#)
  8. RY/BY# (Ready/Busy#)
  9. A19-A21 (Additional Address Inputs)
  10. A22-A24 (Additional Address Inputs)
  11. A25-A27 (Additional Address Inputs)
  12. A28-A30 (Additional Address Inputs)
  13. A31 (Additional Address Input)
  14. ALE (Address Latch Enable)
  15. CLE (Command Latch Enable)
  16. WP#/ACC (Write Protect/Acceleration)
  17. VSS (Ground)

Functional Features

  • High-speed read and write operations enable fast data access
  • Efficient block erase and page program operations for flexible data management
  • Reliable data retention ensures long-term storage without loss
  • Low power consumption extends battery life in portable devices
  • Wide operating temperature range allows usage in various environments

Advantages

  • Large storage capacity meets the demands of modern electronic devices
  • High-speed operations enhance overall system performance
  • Low power consumption prolongs battery life
  • Reliable data retention ensures data integrity over time

Disadvantages

  • Parallel interface may limit compatibility with newer systems using serial interfaces
  • Limited endurance compared to some other flash memory technologies
  • Relatively higher cost per unit compared to lower capacity alternatives

Working Principles

The S29GL256N11TFIV20 utilizes a NOR flash memory architecture. It stores data in individual memory cells, which can be electrically programmed and erased. The parallel interface allows for efficient data transfer between the memory and the host device.

Detailed Application Field Plans

The S29GL256N11TFIV20 is widely used in various electronic devices that require non-volatile data storage, such as: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

  • S29GL128N10TFI020: 128 Megabit (16 Megabyte) capacity, similar specifications
  • S29GL512N11TFI010: 512 Megabit (64 Megabyte) capacity, similar specifications
  • S29GL01GN11TFI020: 1 Gigabit (128 Megabyte) capacity, similar specifications

Note: This is not an exhaustive list of alternative models, and there may be other options available from different manufacturers.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de S29GL256N11TFIV20 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of S29GL256N11TFIV20 in technical solutions:

  1. Q: What is the S29GL256N11TFIV20? A: The S29GL256N11TFIV20 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 256 megabits (32 megabytes) and operates at a voltage of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL256N11TFIV20? A: The S29GL256N11TFIV20 is commonly used in various electronic devices such as routers, switches, set-top boxes, industrial control systems, and automotive applications.

  3. Q: What is the interface of S29GL256N11TFIV20? A: The S29GL256N11TFIV20 uses a parallel NOR Flash interface with a 16-bit data bus.

  4. Q: What is the maximum operating frequency of S29GL256N11TFIV20? A: The S29GL256N11TFIV20 can operate at a maximum frequency of 66 MHz.

  5. Q: Does S29GL256N11TFIV20 support random access read and write operations? A: Yes, the S29GL256N11TFIV20 supports random access read and write operations, allowing for efficient data retrieval and modification.

  6. Q: Can S29GL256N11TFIV20 be used for code execution? A: Yes, the S29GL256N11TFIV20 can be used for code execution as it supports execute-in-place (XIP) functionality.

  7. Q: What is the erase time of S29GL256N11TFIV20? A: The erase time of S29GL256N11TFIV20 is typically around 2 seconds for a full chip erase.

  8. Q: Does S29GL256N11TFIV20 have built-in error correction capabilities? A: No, the S29GL256N11TFIV20 does not have built-in error correction capabilities. External error correction techniques may be required for data integrity.

  9. Q: Can S29GL256N11TFIV20 operate in harsh environmental conditions? A: Yes, the S29GL256N11TFIV20 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration.

  10. Q: Is S29GL256N11TFIV20 a lead-free and RoHS-compliant device? A: Yes, the S29GL256N11TFIV20 is a lead-free device and complies with the Restriction of Hazardous Substances (RoHS) directive.

Please note that these answers are general and may vary depending on specific product specifications and application requirements.