S29VS128RABBHI000

Basic Information Overview

• Category: Semiconductor Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Wide temperature range operation
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Organization: 16M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Erase/Program Time: 35ms/1.5ms (typical)

Detailed Pin Configuration

The S29VS128RABBHI000 has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | HOLD# | Suspends serial communication | | 4 | WP# | Write protect input | | 5 | SCK | Serial clock input | | 6 | SI | Serial data input | | 7 | SO | Serial data output | | 8 | CS# | Chip select input | | 9 | RESET# | Resets the device |

Functional Features

• High-speed data transfer using SPI interface
• Sector erase and byte/page program operations
• Hardware and software protection options
• Automatic sleep mode for low power consumption
• Reliable data retention and endurance

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even without power - High-speed read and write operations improve system performance - Low power consumption extends battery life in portable devices - Wide temperature range operation allows usage in various environments

Disadvantages: - Limited capacity compared to other storage technologies - Erase and program times may be slower compared to some alternatives - Higher cost per unit compared to traditional magnetic storage

Working Principles

The S29VS128RABBHI000 is based on flash memory technology. It stores data using floating-gate transistors, which can trap or release electric charge to represent binary values. The memory cells are organized into sectors, allowing for efficient erase and program operations. The SPI interface enables communication with the device, facilitating data transfer and control.

Detailed Application Field Plans

The S29VS128RABBHI000 is suitable for a wide range of applications, including: 1. Consumer electronics: Digital cameras, smartphones, tablets 2. Automotive: Infotainment systems, instrument clusters 3. Industrial: Embedded systems, control units 4. Networking: Routers, switches, modems 5. Medical: Patient monitoring devices, diagnostic equipment

Detailed and Complete Alternative Models

1. S25FL128SAGNFI001 by Cypress Semiconductor
2. AT25SF128A-MHN-T by Adesto Technologies
3. MX25L12835FM2I-10G by Macronix International

These alternative models offer similar specifications and functionality to the S29VS128RABBHI000, providing options for different sourcing and pricing considerations.

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