S71PL127JB0BFWQB0G

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High capacity, fast access speed, non-volatile, low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 Megabits (16 Megabytes)
• Access Time: 70 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Minimum 20 years
• Erase/Program Cycles: Minimum 100,000 cycles

Detailed Pin Configuration

The S71PL127JB0BFWQB0G chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. VSS
47. NC
48. VCC

Functional Features

• High-speed data transfer with a 70 ns access time
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy-efficient operation
• Easy integration into existing systems with parallel interface
• Reliable and durable with a minimum data retention of 20 years
• Supports erase and program operations for flexible data management

Advantages and Disadvantages

Advantages: - Large memory capacity of 128 Megabits (16 Megabytes) - Fast access speed for efficient data retrieval - Non-volatile nature ensures data persistence - Low power consumption for extended battery life - Versatile interface allows compatibility with various systems

Disadvantages: - Limited erase and program cycles (100,000 cycles) - Relatively high cost compared to other memory options - Requires additional circuitry for proper integration

Working Principles

The S71PL127JB0BFWQB0G utilizes flash memory technology to store and retrieve data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into blocks, which can be individually erased or programmed. Data is stored by trapping electric charges within the memory cells, and these charges determine the binary values (0s and 1s) of the stored data. Accessing the data involves sending specific address signals to select the desired memory location and reading or writing the corresponding data.

Detailed Application Field Plans

The S71PL127JB0BFWQB0G chip finds applications in various fields, including:

1. Consumer Electronics: Used in digital cameras, smartphones, and portable media players for data storage.
2. Automotive: Integrated into car infotainment systems and navigation devices for storing maps, music, and firmware.
3. Industrial Automation: Utilized in control systems and programmable logic controllers (PLCs) for data storage and program execution.
4. Networking: Incorporated into routers, switches, and network appliances to store configuration settings and firmware.
5. Medical Devices: Employed in medical equipment for storing patient data, firmware, and software updates.

Detailed and Complete Alternative Models

1. S29GL128P10TFI020 - 128 Megabit parallel flash memory with similar specifications and package type.
2. MT28EW128ABA1HPC-0SIT - 128 Megabit parallel flash memory with comparable characteristics and pin configuration.
3. W25Q128JVSIQ - 128 Megabit serial flash memory offering a different interface but similar capacity and performance.

(Note: The above alternative models are provided as examples and may not be an exhaustive list.)

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