STK12C68-PF45I

Introduction

The STK12C68-PF45I is a non-volatile static RAM (NVSRAM) that belongs to the category of semiconductor memory devices. It is widely used in applications where data retention even during power loss or system failure is critical. This entry provides an overview of the STK12C68-PF45I, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Memory Device
• Use: Non-volatile static RAM for critical data retention
• Characteristics: Fast read and write access, non-volatile storage, low power consumption
• Package: 28-pin plastic SOIC (Small Outline Integrated Circuit)
• Essence: Combines the benefits of both SRAM and non-volatile memory technologies
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

• Density: 8 Kbit
• Organization: 1K x 8
• Voltage Range: 4.5V to 5.5V
• Access Time: 45ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Endurance: 10,000 write cycles

Detailed Pin Configuration

The STK12C68-PF45I has a 28-pin configuration with specific pins dedicated to address lines, data input/output, control signals, and power supply connections. The detailed pin configuration is as follows: 1. A0-A9: Address Inputs 2. CE1, CE2: Chip Enable Inputs 3. OE: Output Enable Input 4. WE: Write Enable Input 5. VCC: Power Supply 6. VSS: Ground 7. DQ0-DQ7: Data Input/Output

Functional Features

• Non-volatile Storage: Retains data without the need for a continuous power supply
• Fast Access Time: Allows for quick read and write operations
• Low Power Consumption: Ideal for battery-powered applications
• High Endurance: Withstands frequent write cycles without degradation

Advantages and Disadvantages

Advantages

• Reliable data retention during power loss
• Fast access time for efficient data retrieval
• Low power consumption for energy-efficient operation

Disadvantages

• Limited endurance compared to traditional SRAM
• Higher cost compared to volatile memory options

Working Principles

The STK12C68-PF45I utilizes a combination of volatile SRAM cells and non-volatile EEPROM cells to achieve its unique functionality. During write operations, data is stored in the SRAM portion and then transferred to the non-volatile EEPROM cells for long-term retention. When powered on, the device operates like a standard SRAM, providing fast access to stored data.

Detailed Application Field Plans

The STK12C68-PF45I is well-suited for various applications, including: - Embedded Systems: Provides reliable data storage for critical system parameters - Industrial Control: Ensures data integrity in control systems - Automotive Electronics: Supports event logging and fault tolerance in automotive applications - Medical Devices: Enables secure storage of patient data in medical equipment

Detailed and Complete Alternative Models

Several alternative models to the STK12C68-PF45I include: - STK12C68-C - STK12C68-N - STK12C68-W - STK12C68-Q

These alternative models offer varying densities, access times, and package options to cater to different application requirements.

In conclusion, the STK12C68-PF45I NVSRAM offers a unique combination of non-volatile storage and fast access, making it suitable for a wide range of applications where data integrity is paramount. Its specifications, functional features, and application versatility position it as a reliable choice for critical data retention needs.

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