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DMN2005UFG-7
Product Overview
Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: DFN (Dual Flat No-Lead) package
Essence: Efficient power management
Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Voltage Rating: 60V
- Current Rating: 20A
- On-Resistance: 9.5mΩ
- Gate Threshold Voltage: 2.35V
- Package Type: DFN-8
Detailed Pin Configuration
- Gate
- Source
- Drain
- NC
- NC
- Source
- Drain
- Gate
Functional Features
- Low gate charge
- Enhanced body diode dV/dt and di/dt capability
- RoHS compliant
Advantages and Disadvantages
Advantages: - High voltage capability - Low on-resistance - Fast switching speed
Disadvantages: - Sensitive to static electricity - Limited maximum current rating
Working Principles
The DMN2005UFG-7 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models
- DMN2005UFK-7
- Similar specifications and characteristics
- Available in a different package type
- DMN2005UCB-7
- Lower on-resistance
- Higher gate threshold voltage
Note: The alternative models listed above are for reference purposes and may not be direct replacements.
This comprehensive entry provides an in-depth understanding of the DMN2005UFG-7, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de DMN2005UFG-7 en soluciones técnicas
What is the DMN2005UFG-7?
- The DMN2005UFG-7 is a N-channel enhancement mode MOSFET designed for high-speed, low-voltage applications.
What are the typical applications of the DMN2005UFG-7?
- It is commonly used in power management, load switching, and battery protection circuits in portable electronics and automotive systems.
What is the maximum drain-source voltage of the DMN2005UFG-7?
- The maximum drain-source voltage is 20V, making it suitable for low-voltage applications.
What is the typical on-state resistance (RDS(on)) of the DMN2005UFG-7?
- The typical on-state resistance is very low, around 25 milliohms, which allows for efficient power handling.
Can the DMN2005UFG-7 be used in automotive applications?
- Yes, it is designed to meet the stringent requirements of automotive systems, including load switching and power distribution.
Does the DMN2005UFG-7 have built-in ESD protection?
- Yes, it features built-in ESD protection, enhancing its reliability in various technical solutions.
What is the maximum continuous drain current of the DMN2005UFG-7?
- The maximum continuous drain current is typically around 6.3A, making it suitable for moderate power applications.
Is the DMN2005UFG-7 RoHS compliant?
- Yes, it is RoHS compliant, meeting environmental standards for electronic components.
Can the DMN2005UFG-7 be used in battery protection circuits?
- Absolutely, its low on-state resistance and high-speed characteristics make it well-suited for battery protection applications.
What are the thermal characteristics of the DMN2005UFG-7?
- It has a low thermal resistance and is designed to efficiently dissipate heat, ensuring reliable performance in various technical solutions.