Diodes Incorporated
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DMN60H080DS-13
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DMN60H080DS-13

Product Overview

Category

The DMN60H080DS-13 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The DMN60H080DS-13 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 60A
  • On-Resistance (Rds(on)max): 0.080 ohm
  • Gate-Source Voltage (Vgs): ±20V
  • Total Gate Charge (Qg): 80nC
  • Avalanche Energy (Eas): 160mJ

Detailed Pin Configuration

The DMN60H080DS-13 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.
  • Low gate charge facilitates efficient gate control.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications.
  • Low on-resistance reduces power dissipation.
  • Fast switching speed enhances performance in dynamic systems.

Disadvantages

  • Higher gate charge compared to some alternative models.
  • May require additional heat dissipation measures in high-power applications.

Working Principles

The DMN60H080DS-13 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The DMN60H080DS-13 is widely used in: - Power supplies - Motor control systems - Inverters - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the DMN60H080DS-13 include: - IRF840 - FDP8878 - STP60NF06L - AOT290L

In conclusion, the DMN60H080DS-13 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for various high-power electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de DMN60H080DS-13 en soluciones técnicas

  1. What is the maximum voltage rating of DMN60H080DS-13?

    • The maximum voltage rating of DMN60H080DS-13 is 800V.

  2. What is the continuous drain current of DMN60H080DS-13?

    • The continuous drain current of DMN60H080DS-13 is 60A.

  3. What type of package does DMN60H080DS-13 come in?

    • DMN60H080DS-13 comes in a TO-252 (DPAK) package.

  4. What is the on-resistance of DMN60H080DS-13?

    • The on-resistance of DMN60H080DS-13 is typically 0.08 ohms.

  5. Is DMN60H080DS-13 suitable for high-frequency switching applications?

    • Yes, DMN60H080DS-13 is suitable for high-frequency switching applications.

  6. What is the operating temperature range of DMN60H080DS-13?

    • The operating temperature range of DMN60H080DS-13 is -55°C to 150°C.

  7. Does DMN60H080DS-13 have built-in protection features?

    • DMN60H080DS-13 has built-in overcurrent and thermal protection features.

  8. Can DMN60H080DS-13 be used in automotive applications?

    • Yes, DMN60H080DS-13 is suitable for use in automotive applications.

  9. What gate-source voltage is required to fully enhance DMN60H080DS-13?

    • A gate-source voltage of around 10V is typically required to fully enhance DMN60H080DS-13.

  10. Is DMN60H080DS-13 RoHS compliant?

    • Yes, DMN60H080DS-13 is RoHS compliant.