Encyclopedia Entry: 71256S100TDB

Product Information Overview

Category

The 71256S100TDB belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems and devices.

Characteristics

• High storage capacity
• Fast data access speed
• Non-volatile memory
• Low power consumption

Package

The 71256S100TDB is typically packaged in a compact integrated circuit (IC) form.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The 71256S100TDB is commonly available in individual packaging, with each unit containing one IC chip.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 71256 bits (or 64 kilobits)
• Organization: 8,192 words x 8 bits
• Supply Voltage: 5V
• Access Time: 100 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71256S100TDB has a total of 28 pins, which are assigned specific functions as follows:

1. Address Inputs (A0-A12): These pins receive the address signals to specify the memory location.
2. Data Inputs/Outputs (DQ0-DQ7): These pins handle the input and output of data to/from the memory.
3. Chip Enable (CE): This pin enables or disables the memory chip.
4. Output Enable (OE): This pin controls the output of data from the memory.
5. Write Enable (WE): This pin enables or disables the write operation to the memory.
6. Power Supply (Vcc) and Ground (GND): These pins provide the necessary power and ground connections.

Functional Features

• Random access capability: Allows quick and direct access to any memory location.
• Non-volatile storage: Retains data even when power is disconnected.
• High-speed operation: Provides fast data access for efficient system performance.
• Low power consumption: Helps conserve energy in electronic devices.

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Non-volatile memory ensures data retention during power interruptions.
• Compact IC package allows for easy integration into various electronic systems.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.
• Sensitivity to environmental conditions, such as temperature and voltage fluctuations.

Working Principles

The 71256S100TDB utilizes static random access memory (SRAM) technology. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell representing one bit of data. Accessing data involves providing the appropriate address signals to select the desired memory location and enabling the read or write operation.

Detailed Application Field Plans

The 71256S100TDB finds application in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Communication devices - Industrial automation equipment - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 71256S100TDB include: - 6116S200TDB - 6264S100TDB - 62256S200TDB - 628128S100TDB

These models differ in terms of capacity, organization, and access time, providing options suitable for different requirements.

In conclusion, the 71256S100TDB is a static random access memory (SRAM) device that offers high-speed data access, non-volatile storage, and low power consumption. It finds application in various electronic systems and can be considered alongside alternative models based on specific requirements.