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71V25761S183BG

Encyclopedia Entry: 71V25761S183BG

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V25761S183BG is a high-speed, low-power, 3.3V synchronous static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Synchronous interface - 3.3V power supply - 256K x 18 organization - Byte write control - Automatic power-down mode - Industrial temperature range (-40°C to +85°C)

Package: The 71V25761S183BG is available in a 119-ball BGA (Ball Grid Array) package, which provides a compact and reliable form factor for easy integration into electronic circuits.

Essence: This IC serves as a high-performance memory component, offering fast and efficient data storage capabilities for a wide range of applications.

Packaging/Quantity: The 71V25761S183BG is typically sold in reels or trays, with each reel containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Organization: 256K words x 18 bits
  • Supply Voltage: 3.3V ± 0.3V
  • Access Time: 10 ns (maximum)
  • Operating Current: 100 mA (typical)
  • Standby Current: 10 μA (typical)
  • Package Dimensions: 8mm x 8mm BGA

Detailed Pin Configuration

The 71V25761S183BG features a 119-ball BGA package with various pins for different functions. The pin configuration is as follows:

  1. VDDQ - Power supply for I/O buffers
  2. VDD - Power supply for core circuitry
  3. DQ0-DQ17 - Data input/output pins
  4. A0-A17 - Address input pins
  5. WE# - Write Enable input
  6. OE# - Output Enable input
  7. CE# - Chip Enable input
  8. CLK - Clock input
  9. NC - No Connection (reserved)
  10. GND - Ground

(Note: The above list represents a subset of the total pin configuration.)

Functional Features

The 71V25761S183BG offers several functional features that enhance its performance and usability:

  1. High-Speed Operation: With an access time of 10 ns, this IC enables fast data read and write operations.
  2. Low Power Consumption: The IC is designed to minimize power consumption, making it suitable for battery-powered devices.
  3. Synchronous Interface: The synchronous interface ensures reliable data transfer between the IC and the host system.
  4. Automatic Power-Down Mode: The IC includes a power-down mode that reduces power consumption when the device is idle.
  5. Byte Write Control: The byte write control feature allows selective writing of individual bytes, providing flexibility in data manipulation.

Advantages and Disadvantages

Advantages: - High-speed operation facilitates quick data access. - Low power consumption extends battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Automatic power-down mode reduces power consumption during idle periods. - Byte write control offers flexibility in data manipulation.

Disadvantages: - Limited storage capacity compared to larger memory devices. - Higher cost per bit compared to some other memory technologies. - Requires careful handling due to the delicate nature of integrated circuits.

Working Principles

The 71V25761S183BG operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes a synchronous interface to communicate with the host system, enabling fast and reliable data transfer.

Detailed Application Field Plans

The 71V25761S183BG can be applied in various electronic systems and devices, including but not limited to: - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical devices - Consumer electronics

Its high-speed operation, low power consumption, and compact form factor make it suitable for applications where fast and efficient data storage is required.

Detailed and Complete Alternative Models

  1. 71V25761S183BGI8 - Similar to 71V25761S183BG, but with an extended industrial temperature range (-40°C to +105°C).
  2. 71V25761S183BGGI - Similar to 71V25761S183BG, but with a wider supply voltage range (3.0V to 3.6V).
  3. 71V25761S183BGI - Similar to 71V25761S183BG,

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 71V25761S183BG en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of 71V25761S183BG in technical solutions:

  1. Q: What is the 71V25761S183BG? A: The 71V25761S183BG is a specific model of synchronous SRAM (Static Random Access Memory) chip.

  2. Q: What is the capacity of the 71V25761S183BG? A: The 71V25761S183BG has a capacity of 256K words x 18 bits, which translates to 4,608 kilobits or 576 kilobytes.

  3. Q: What is the operating voltage range for this chip? A: The 71V25761S183BG operates within a voltage range of 3.0V to 3.6V.

  4. Q: What is the access time of the 71V25761S183BG? A: The access time of this chip is typically 10 ns, meaning it takes approximately 10 nanoseconds to read or write data.

  5. Q: Can the 71V25761S183BG be used in industrial applications? A: Yes, this chip is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Q: Does the 71V25761S183BG support multiple banks? A: No, this particular chip does not support multiple banks. It has a single bank architecture.

  7. Q: What is the pin configuration of the 71V25761S183BG? A: This chip follows a standard 100-pin TQFP (Thin Quad Flat Package) pin configuration.

  8. Q: Is the 71V25761S183BG compatible with other memory chips? A: Yes, this chip is compatible with other synchronous SRAMs that adhere to the same interface specifications.

  9. Q: Can the 71V25761S183BG be used in battery-powered devices? A: Yes, this chip can be used in battery-powered devices as it operates within a low voltage range and has low power consumption.

  10. Q: What are some typical applications of the 71V25761S183BG? A: This chip is commonly used in networking equipment, telecommunications systems, industrial control systems, and embedded systems where high-speed and reliable memory is required.

Please note that these answers are general and may vary depending on specific implementation requirements or datasheet specifications.