The 71V25761S183BG8 has a total of 48 pins arranged as follows:
```
1 A0-A20 Address Inputs 2 DQ0-DQ15 Data Input/Output 3 WE# Write Enable 4 OE# Output Enable 5 CE# Chip Enable 6 VCC Power Supply 7 GND Ground ... ... ... ```
Advantages: - Large storage capacity - Fast data access - Low power consumption - Reliable performance
Disadvantages: - Relatively high cost compared to other memory options - Limited write endurance
The 71V25761S183BG8 is based on Flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When a write operation is performed, charges are trapped in the floating gate, altering the transistor's behavior and storing the desired data. During read operations, the stored charges are detected, allowing the retrieval of the stored information.
The 71V25761S183BG8 memory chip finds applications in various fields, including: - Computer systems - Networking equipment - Consumer electronics - Automotive systems - Industrial control systems
These alternative models offer similar specifications and functionality, providing options for different system requirements.
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Sure! Here are 10 common questions and answers related to the application of 71V25761S183BG8 in technical solutions:
Q: What is the 71V25761S183BG8? A: The 71V25761S183BG8 is a specific model of synchronous SRAM (Static Random Access Memory) integrated circuit.
Q: What is the capacity of the 71V25761S183BG8? A: The 71V25761S183BG8 has a capacity of 256K words x 18 bits, which translates to a total storage capacity of 4,608 kilobits or 576 kilobytes.
Q: What is the operating voltage range for the 71V25761S183BG8? A: The 71V25761S183BG8 operates within a voltage range of 3.0V to 3.6V.
Q: What is the access time of the 71V25761S183BG8? A: The 71V25761S183BG8 has an access time of 10 ns, meaning it takes approximately 10 nanoseconds to read or write data.
Q: Can the 71V25761S183BG8 be used in industrial applications? A: Yes, the 71V25761S183BG8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.
Q: Does the 71V25761S183BG8 support multiple chip enable inputs? A: Yes, the 71V25761S183BG8 supports two chip enable inputs, allowing for more flexible control over memory access.
Q: What is the power consumption of the 71V25761S183BG8? A: The power consumption of the 71V25761S183BG8 varies depending on the operating conditions, but it is generally low due to its synchronous design.
Q: Can the 71V25761S183BG8 be used in battery-powered devices? A: Yes, the low power consumption of the 71V25761S183BG8 makes it suitable for use in battery-powered devices where energy efficiency is crucial.
Q: Does the 71V25761S183BG8 support burst mode operation? A: Yes, the 71V25761S183BG8 supports burst mode operation, allowing for faster consecutive read or write operations.
Q: What are some typical applications for the 71V25761S183BG8? A: The 71V25761S183BG8 is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial control systems, and embedded systems that require high-speed and reliable memory storage.
Please note that these answers are general and may vary based on specific implementation requirements.