Encyclopedia Entry: 71V416S10PHGI

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416S10PHGI is a high-speed, low-power, 4 Megabit (4M x 16-bit) CMOS SRAM (Static Random Access Memory) IC. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The 71V416S10PHGI is available in a 44-pin TSOP (Thin Small Outline Package) form factor. This package provides a compact and space-saving solution for circuit board designs.

Essence: The essence of the 71V416S10PHGI lies in its ability to provide high-speed and efficient data storage capabilities, making it an essential component in many electronic devices.

Packaging/Quantity: The 71V416S10PHGI is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Organization: 4M x 16-bit
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 5 mA (typical)
• Package Type: 44-pin TSOP

Detailed Pin Configuration

The 71V416S10PHGI features a total of 44 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. A0-A20: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Byte Enables
7. VCC: Power Supply (3.3V)
8. GND: Ground

(Note: This is a simplified pin configuration. Please refer to the datasheet for a complete and accurate pinout diagram.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Large storage capacity of 4 Megabits provides ample space for data storage.
• Reliable data retention ensures that stored information remains intact over time.
• Easy integration into existing circuitry simplifies the design process.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration simplifies circuit design and implementation.

Disadvantages: - Limited storage capacity compared to higher-capacity memory options. - Higher cost per bit compared to some other memory technologies. - Sensitive to electrical noise and voltage fluctuations.

Working Principles

The 71V416S10PHGI operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain their state as long as power is supplied. The address inputs are used to select specific memory locations, while the data inputs/outputs facilitate the transfer of information between the IC and the external system.

Detailed Application Field Plans

The 71V416S10PHGI finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics - Consumer electronics

Its high-speed operation, low power consumption, and reliable data retention make it suitable for applications that require fast and efficient data storage and retrieval.

Detailed and Complete Alternative Models

• 71V416L10PHGI: Similar to the 71V416S10PHGI but operates at a lower voltage (2.5V).
• 71V816S10PHGI: Double the storage capacity of the 71V416S10PHGI (8 Megabits).
• 71V632S10PHGI: A smaller variant with reduced storage capacity (2 Megabits).

(Note: The above alternative models are provided for reference purposes. Please consult the manufacturer's documentation for the most up-to-date information on alternative models.)

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