IDT71124S12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 119-ball BGA (Ball Grid Array)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71124S12Y8 has a total of 119 pins. The pin configuration is as follows:

• Pins 1-8: Data Input/Output (DQ0-DQ7)
• Pins 9-11: Address Inputs (A0-A2)
• Pins 12-14: Chip Enable (CE), Output Enable (OE), Write Enable (WE)
• Pins 15-18: Address Inputs (A3-A6)
• Pins 19-22: Address Inputs (A7-A10)
• Pins 23-26: Address Inputs (A11-A14)
• Pins 27-30: Address Inputs (A15-A18)
• Pins 31-34: Address Inputs (A19-A22)
• Pins 35-38: Address Inputs (A23-A26)
• Pins 39-42: Address Inputs (A27-A30)
• Pins 43-46: Address Inputs (A31-A34)
• Pins 47-50: Address Inputs (A35-A38)
• Pins 51-54: Address Inputs (A39-A42)
• Pins 55-58: Address Inputs (A43-A46)
• Pins 59-62: Address Inputs (A47-A50)
• Pins 63-66: Address Inputs (A51-A54)
• Pins 67-70: Address Inputs (A55-A58)
• Pins 71-74: Address Inputs (A59-A62)
• Pins 75-78: Address Inputs (A63-A66)
• Pins 79-82: Address Inputs (A67-A70)
• Pins 83-86: Address Inputs (A71-A74)
• Pins 87-90: Address Inputs (A75-A78)
• Pins 91-94: Address Inputs (A79-A82)
• Pins 95-98: Address Inputs (A83-A86)
• Pins 99-102: Address Inputs (A87-A90)
• Pins 103-106: Address Inputs (A91-A94)
• Pins 107-110: Address Inputs (A95-A98)
• Pins 111-114: Address Inputs (A99-A102)
• Pins 115-118: Address Inputs (A103-A106)
• Pin 119: Ground (GND)

Functional Features

• High-speed operation allows for quick data access and retrieval
• Low-power consumption ensures efficient energy usage
• Synchronous interface enables synchronized communication with other devices
• Reliable data retention for long periods of time
• Easy integration into various electronic systems due to compact package size

Advantages and Disadvantages

Advantages

• Fast access time enhances overall system performance
• Low power consumption reduces energy costs
• Synchronous interface simplifies system design and integration
• Compact package size saves board space
• Reliable data retention ensures data integrity

Disadvantages

• Limited memory size (1 Megabit)
• Higher cost compared to lower-capacity memory devices
• Requires careful handling due to sensitive nature of integrated circuits

Working Principles

The IDT71124S12Y8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates at a voltage of 3.3V and provides a fast access time of 12 ns. The device utilizes address inputs to select specific memory locations and data input/output pins for data transfer. The chip enable, output enable, and write enable pins control the read and write operations.

Detailed Application Field Plans

The IDT71124S12Y8 can be used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Medical equipment
6. Automotive electronics
7. Consumer electronics

Alternative Models

Other alternative models with similar specifications and features include:

1. Cypress CY62128BLL-70SXI
2. Samsung K6R1016C1D-JI10