IDT, Integrated Device Technology Inc
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IDT71T75602S200PFGI8
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IDT71T75602S200PFGI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
  • Essence: Provides high-performance data storage and retrieval capabilities
  • Packaging/Quantity: Single unit per package

Specifications

  • Model: IDT71T75602S200PFGI8
  • Technology: Synchronous SRAM
  • Organization: 2M x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Clock Frequency: 200 MHz
  • Power Consumption: Low power operation
  • Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The IDT71T75602S200PFGI8 has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. VDDQ
  36. /WE#
  37. /OE#
  38. A0
  39. A1
  40. A2
  41. A3
  42. A4
  43. A5
  44. A6
  45. A7
  46. A8
  47. A9
  48. A10
  49. A11
  50. A12
  51. A13
  52. A14
  53. A15
  54. A16
  55. A17
  56. A18
  57. A19
  58. A20
  59. A21
  60. A22
  61. A23
  62. A24
  63. A25
  64. A26
  65. A27
  66. A28
  67. A29
  68. A30
  69. A31
  70. /CS#
  71. CLK
  72. VDD
  73. VSS
  74. /ZZ#
  75. ZZ
  76. ZZ
  77. ZZ
  78. ZZ
  79. ZZ
  80. ZZ
  81. ZZ
  82. ZZ
  83. ZZ
  84. ZZ
  85. ZZ
  86. ZZ
  87. ZZ
  88. ZZ
  89. ZZ
  90. ZZ
  91. ZZ
  92. ZZ
  93. ZZ
  94. ZZ
  95. ZZ
  96. ZZ
  97. ZZ
  98. ZZ
  99. ZZ
  100. ZZ
  101. ZZ
  102. ZZ
  103. ZZ
  104. ZZ
  105. ZZ
  106. ZZ
  107. ZZ
  108. ZZ
  109. ZZ
  110. ZZ
  111. ZZ
  112. ZZ
  113. ZZ
  114. ZZ
  115. ZZ
  116. ZZ
  117. ZZ
  118. ZZ
  119. VDD

Functional Features

  • High-speed operation: The IDT71T75602S200PFGI8 offers fast access times and clock frequencies, making it suitable for applications requiring quick data retrieval.
  • Low-power consumption: This SRAM device is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
  • Synchronous operation: The memory operates synchronously with an external clock signal, allowing for precise timing control.
  • Easy integration: The IC can be easily integrated into various electronic systems due to its compact package and standard pin configuration.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures accurate timing control. - Easy integration into different electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to alternative memory options.

Working Principles

The IDT71T75602S200PFGI

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71T75602S200PFGI8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71T75602S200PFGI8 in technical solutions:

  1. Question: What is IDT71T75602S200PFGI8?
    Answer: IDT71T75602S200PFGI8 is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71T75602S200PFGI8?
    Answer: The IDT71T75602S200PFGI8 has a capacity of 2 Megabits (256K x 8 bits).

  3. Question: What is the operating voltage range for IDT71T75602S200PFGI8?
    Answer: The operating voltage range for IDT71T75602S200PFGI8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71T75602S200PFGI8?
    Answer: The access time of IDT71T75602S200PFGI8 is 20 ns, which means it takes approximately 20 nanoseconds to read or write data.

  5. Question: Can IDT71T75602S200PFGI8 be used in industrial applications?
    Answer: Yes, IDT71T75602S200PFGI8 is suitable for industrial applications as it operates within the specified temperature range of -40°C to +85°C.

  6. Question: Does IDT71T75602S200PFGI8 support multiple chip enable signals?
    Answer: Yes, IDT71T75602S200PFGI8 supports two chip enable signals (CE1 and CE2) for flexible memory bank selection.

  7. Question: What is the power consumption of IDT71T75602S200PFGI8?
    Answer: The power consumption of IDT71T75602S200PFGI8 varies depending on the operating conditions, but it typically consumes low power.

  8. Question: Can IDT71T75602S200PFGI8 be used in battery-powered devices?
    Answer: Yes, IDT71T75602S200PFGI8 can be used in battery-powered devices as it operates at low voltage and consumes low power.

  9. Question: Does IDT71T75602S200PFGI8 have any built-in error correction capabilities?
    Answer: No, IDT71T75602S200PFGI8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: Is IDT71T75602S200PFGI8 a commonly used SRAM in technical solutions?
    Answer: Yes, IDT71T75602S200PFGI8 is a popular choice for various technical solutions due to its capacity, speed, and compatibility with different applications.

Please note that the answers provided here are general and may vary based on specific requirements and use cases. It's always recommended to refer to the official datasheet or consult with technical experts for accurate information.