IDT71T75702S75PFI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Density: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Parallel
• Organization: 256K words x 8 bits
• Package Dimensions: 48-ball FBGA

Pin Configuration

The IDT71T75702S75PFI has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. WE#
44. OE#
45. CE#
46. UB#
47. LB#
48. VDD

Functional Features

• High-speed operation with a 7.5 ns access time
• Low-power consumption for energy-efficient applications
• Synchronous interface for easy integration into system designs
• Reliable data retention for long-term storage requirements
• Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - Fast access time enables quick data retrieval - Low power consumption helps prolong battery life in portable devices - Synchronous interface simplifies system design and integration - Reliable data retention ensures data integrity over extended periods - Wide operating temperature range allows usage in various environments

Disadvantages: - Limited memory capacity compared to higher-density alternatives - Parallel interface may require additional circuitry for compatibility with serial interfaces - Higher cost per bit compared to larger memory modules

Working Principles

The IDT71T75702S75PFI is a synchronous SRAM that stores data using flip-flops, allowing for fast read and write operations. It operates at a voltage of 3.3V and communicates with the host system through a parallel interface. The synchronous nature of the device ensures that data transfers are synchronized with a clock signal, enabling precise timing and reliable data transmission.

Detailed Application Field Plans

The IDT71T75702S75PFI is commonly used in various electronic systems that require high-speed and low-power memory storage. Some potential application fields include:

1. Networking equipment: Used for buffering and caching data in routers, switches, and network appliances.
2. Telecommunications systems: Provides memory storage for call processing, voice/data buffering, and protocol handling in telecom infrastructure.
3. Industrial automation: Used in control systems, robotics, and machine vision applications that require fast and reliable data storage.
4. Automotive electronics: Provides memory for engine control units (ECUs), infotainment systems, and advanced driver-assistance systems (ADAS).
5. Consumer electronics: Used in gaming consoles, set-top boxes, and digital cameras for high-performance data storage.

Detailed and Complete Alternative Models

1. IDT71V35761S75BQI: 2 Megabit (256K x 8) synchronous SRAM with a 7.5 ns access time. Available in a 100-ball BGA package.
2. Cypress CY62157EV30LL-45ZSXI: 2 Megabit (256K x 8) low-power synchronous SRAM with a 45 ns access time. Available in a 48-ball FBGA package.
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