IDT, Integrated Device Technology Inc
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IDT71V016SA10PH8
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IDT71V016SA10PH8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in reels of 250 units

Specifications

  • Organization: 128K x 16 bits
  • Voltage Supply: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 10 µA (typical)
  • Package Dimensions: 10mm x 10mm

Pin Configuration

The IDT71V016SA10PH8 IC has a total of 44 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. VCC
  18. DQ0
  19. DQ1
  20. DQ2
  21. DQ3
  22. DQ4
  23. DQ5
  24. DQ6
  25. DQ7
  26. DQ8
  27. DQ9
  28. DQ10
  29. DQ11
  30. DQ12
  31. DQ13
  32. DQ14
  33. DQ15
  34. WE#
  35. OE#
  36. CE#
  37. UB#
  38. LB#
  39. CLK
  40. VSS
  41. NC
  42. NC
  43. NC
  44. NC

Functional Features

  • High-speed operation: The IDT71V016SA10PH8 offers a fast access time of 10 ns, allowing for quick data retrieval.
  • Low-power consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Synchronous operation: The memory operates synchronously with an external clock signal, ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity compared to other memory devices. - Relatively higher cost per unit compared to alternative memory options.

Working Principles

The IDT71V016SA10PH8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It utilizes a clock signal to synchronize the read and write operations. When the chip enable (CE#) and output enable (OE#) signals are active, the memory can be accessed by providing the appropriate address inputs (A0-A15). Data is then written or read through the bidirectional data input/output pins (DQ0-DQ15).

Detailed Application Field Plans

The IDT71V016SA10PH8 is commonly used in various applications, including:

  1. Computer systems: Used as cache memory to improve overall system performance.
  2. Networking equipment: Provides high-speed data buffering capabilities.
  3. Telecommunications devices: Enables fast data storage and retrieval in communication systems.
  4. Industrial control systems: Used for storing critical data in real-time applications.
  5. Consumer electronics: Integrated into devices such as gaming consoles and digital cameras for data storage purposes.

Alternative Models

  1. Samsung K6R4016V1D-UI10: Similar specifications and pin configuration.
  2. Micron MT45W4MW16BFB-708 WT:B: Alternative option with higher storage capacity.
  3. Cypress CY62167EV30LL-45ZSXI: Lower power consumption alternative with similar performance.

Please note that the above alternatives may have slight variations in characteristics and packaging. It is recommended to refer to the respective datasheets for detailed information.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V016SA10PH8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V016SA10PH8 in technical solutions:

  1. Question: What is IDT71V016SA10PH8?
    Answer: IDT71V016SA10PH8 is a high-speed, low-power CMOS static RAM (SRAM) chip with a capacity of 1 Megabit (128K x 8).

  2. Question: What is the operating voltage range for IDT71V016SA10PH8?
    Answer: The operating voltage range for IDT71V016SA10PH8 is typically between 4.5V and 5.5V.

  3. Question: What is the maximum operating frequency of IDT71V016SA10PH8?
    Answer: The maximum operating frequency of IDT71V016SA10PH8 is 10 MHz.

  4. Question: Can IDT71V016SA10PH8 be used in battery-powered devices?
    Answer: Yes, IDT71V016SA10PH8 is designed to operate at low power and can be used in battery-powered devices.

  5. Question: What is the access time of IDT71V016SA10PH8?
    Answer: The access time of IDT71V016SA10PH8 is 10 ns, which means it takes 10 nanoseconds to read or write data.

  6. Question: Does IDT71V016SA10PH8 support asynchronous or synchronous operation?
    Answer: IDT71V016SA10PH8 supports asynchronous operation, meaning it does not require a clock signal for data transfer.

  7. Question: Can IDT71V016SA10PH8 be used as a cache memory?
    Answer: Yes, IDT71V016SA10PH8 can be used as a cache memory due to its fast access time and high-speed operation.

  8. Question: What is the package type of IDT71V016SA10PH8?
    Answer: IDT71V016SA10PH8 is available in a 44-pin Plastic Leaded Chip Carrier (PLCC) package.

  9. Question: Can IDT71V016SA10PH8 be used in industrial applications?
    Answer: Yes, IDT71V016SA10PH8 is suitable for industrial applications due to its wide operating temperature range (-40°C to +85°C).

  10. Question: Is IDT71V016SA10PH8 pin-compatible with other SRAM chips?
    Answer: IDT71V016SA10PH8 follows industry-standard pinout and is compatible with other 1 Megabit SRAM chips, making it easy to replace in existing designs.

Please note that these answers are based on general information about IDT71V016SA10PH8 and may vary depending on specific application requirements.