IDT71V016SA10YGI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 48-pin Thin Small Outline Package (TSOP)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Type: Synchronous SRAM
• Density: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 100 years
• Interface: Parallel

Pin Configuration (48-pin TSOP)

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. GND
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE#
28. OE#
29. CE#
30. UB#
31. LB#
32. CLK
33. CLKEN#
34. CKE#
35. CS#
36. RAS#
37. CAS#
38. WEN#
39. OEN#
40. VCC
41. DQ8
42. DQ9
43. DQ10
44. DQ11
45. DQ12
46. DQ13
47. DQ14
48. DQ15

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Provides non-volatile storage capabilities, retaining data even when power is lost.
• Supports various memory operations such as read, write, and erase.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable synchronous design ensures accurate data transfers. - Non-volatile storage capability prevents data loss during power outages.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per unit compared to alternative memory options. - Requires additional control signals for proper operation.

Working Principles

The IDT71V016SA10YGI8 operates based on the principles of synchronous static random-access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device utilizes an address bus to specify the location of the data to be accessed and a data bus for reading from or writing to the memory cells.

The synchronous design ensures that data transfers occur in synchronization with a clock signal. This allows for reliable and accurate data retrieval and storage. Control signals such as Write Enable (WE#), Output Enable (OE#), and Chip Enable (CE#) are used to manage the memory operations.

Detailed Application Field Plans

The IDT71V016SA10YGI8 is commonly used in various electronic devices that require high-speed data storage and retrieval capabilities. Some of the application fields where this memory device finds utility include:

1. Computer systems: Used as cache memory or for storing critical system data.
2. Networking equipment: Provides fast data buffering and packet processing capabilities.
3. Telecommunications devices: Enables quick access to call routing information and voice data.
4. Industrial control systems: Stores real-time sensor data and control parameters.
5. Automotive electronics: Supports data storage requirements for engine management systems and infotainment units.

Detailed and Complete Alternative Models

1. IDT71V016SA10PHI: Similar specifications, but available in a 44-pin Plastic Leaded Chip Carrier (PLCC) package.
2. Cypress CY62128BLL-70SXI: Offers the same density and operating voltage, but with a faster access time of 7 ns.
3. Micron MT45W8MW16BGX-701 WT: Higher density (128 Megabit) synchronous SRAM with similar characteristics and package type.

These alternative models provide options with varying specifications and features, allowing users to choose