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IDT71V2559S80BG

IDT71V2559S80BG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in reels or trays, quantity depends on customer requirements

Specifications

  • Memory Type: SRAM
  • Organization: 32M x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 8 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Dimensions: 13mm x 22mm
  • Pin Count: 119

Detailed Pin Configuration

The IDT71V2559S80BG has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. VDD
  12. A0
  13. A1
  14. A2
  15. A3
  16. A4
  17. A5
  18. A6
  19. A7
  20. A8
  21. A9
  22. A10
  23. A11
  24. A12
  25. A13
  26. A14
  27. A15
  28. A16
  29. A17
  30. A18
  31. A19
  32. A20
  33. A21
  34. A22
  35. A23
  36. A24
  37. A25
  38. A26
  39. A27
  40. A28
  41. A29
  42. A30
  43. A31
  44. VSS
  45. WE#
  46. OE#
  47. CE#
  48. UB#
  49. LB#
  50. CLK
  51. CLKEN#
  52. CKE#
  53. CS#
  54. RAS#
  55. CAS#
  56. WEN#
  57. OEN#
  58. BHE#
  59. BLE#
  60. DQM0#
  61. DQM1#
  62. DQM2#
  63. DQM3#
  64. VDDQ
  65. DQ8
  66. DQ9
  67. DQ10
  68. DQ11
  69. DQ12
  70. DQ13
  71. DQ14
  72. DQ15
  73. VSSQ 74-119. NC (No Connection)

Functional Features

  • High-speed operation: The IDT71V2559S80BG offers fast access times, making it suitable for applications that require quick data retrieval.
  • Low-power consumption: This SRAM device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
  • Synchronous interface: The memory operates synchronously with the system clock, ensuring reliable and efficient data transfer.
  • Easy integration: The BGA package allows for compact and space-saving designs, facilitating easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access times enable high-performance data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Compact BGA package allows for space-efficient designs.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to alternative memory options. - Vulnerable to data loss in case of power failure.

Working Principles

The IDT71V2559S80BG is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving memory addresses from the system and accessing the corresponding data stored in its memory cells. The synchronous interface ensures that data transfers occur at precise timings synchronized with the system clock. This allows for efficient and reliable data exchange between the memory and the system.

Detailed Application Field Plans

The IDT71V2559S80BG is commonly used in various applications, including:

  1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
  2. Networking equipment: Provides fast data buffering and storage capabilities in routers, switches, and network appliances.
  3. Telecommunications devices: Used for data buffering and temporary storage in communication systems, such as base stations and network gateways.
  4. Industrial control systems: Enables quick data processing and storage in automation systems, PLCs (Programmable Logic Controllers), and robotics.
  5. Consumer electronics: Used in gaming consoles, set-top boxes, and digital cameras for high-speed data storage and

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V2559S80BG en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S80BG in technical solutions:

  1. Q: What is IDT71V2559S80BG? A: IDT71V2559S80BG is a high-speed, low-power CMOS static RAM (SRAM) device manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V2559S80BG? A: IDT71V2559S80BG has a capacity of 32 megabits (4 megabytes) organized as 2,097,152 words by 16 bits.

  3. Q: What is the operating voltage range for IDT71V2559S80BG? A: The operating voltage range for IDT71V2559S80BG is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V2559S80BG? A: IDT71V2559S80BG has an access time of 8 ns, which refers to the time it takes for data to be read from or written to the memory.

  5. Q: Can IDT71V2559S80BG be used in battery-powered devices? A: Yes, IDT71V2559S80BG is designed to operate at low power and can be used in battery-powered devices.

  6. Q: Does IDT71V2559S80BG support multiple read/write operations simultaneously? A: No, IDT71V2559S80BG does not support simultaneous multiple read/write operations. It operates in a single-access mode.

  7. Q: What is the package type of IDT71V2559S80BG? A: IDT71V2559S80BG is available in a 54-pin plastic TSOP (Thin Small Outline Package) with a 0.8mm pitch.

  8. Q: Can IDT71V2559S80BG be used in industrial temperature environments? A: Yes, IDT71V2559S80BG is designed to operate in industrial temperature ranges from -40°C to +85°C.

  9. Q: Does IDT71V2559S80BG have any built-in error correction capabilities? A: No, IDT71V2559S80BG does not have built-in error correction capabilities. It is a standard SRAM device.

  10. Q: What are some typical applications of IDT71V2559S80BG? A: IDT71V2559S80BG is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.