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IDT71V3558SA100BG8

IDT71V3558SA100BG8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous SRAM
  • Package: BGA (Ball Grid Array)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (4Mbit)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Pin Count: 100 pins

Pin Configuration

The IDT71V3558SA100BG8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. A32
  44. A33
  45. A34
  46. A35
  47. A36
  48. A37
  49. A38
  50. A39
  51. A40
  52. A41
  53. A42
  54. A43
  55. A44
  56. A45
  57. A46
  58. A47
  59. A48
  60. A49
  61. A50
  62. A51
  63. A52
  64. A53
  65. A54
  66. A55
  67. A56
  68. A57
  69. A58
  70. A59
  71. A60
  72. A61
  73. A62
  74. A63
  75. A64
  76. A65
  77. A66
  78. A67
  79. A68
  80. A69
  81. A70
  82. A71
  83. A72
  84. A73
  85. A74
  86. A75
  87. A76
  88. A77
  89. A78
  90. A79
  91. A80
  92. A81
  93. A82
  94. A83
  95. A84
  96. A85
  97. A86
  98. A87
  99. A88
  100. VDDQ

Functional Features

  • High-speed operation with a 10 ns access time
  • Low-power consumption for energy-efficient applications
  • Synchronous interface for easy integration into system designs
  • Reliable data storage and retrieval capabilities
  • Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Low-power consumption helps in reducing energy costs - Synchronous interface simplifies system integration - Reliable performance ensures data integrity - Wide operating temperature range enables usage in various environments

Disadvantages: - Limited memory capacity compared to higher-density alternatives - Parallel interface may require more complex circuitry for interfacing with modern systems

Working Principles

The IDT71V3558SA100BG8 is a synchronous SRAM that stores and retrieves data using an internal clock signal. It operates at a voltage of 3.3V and provides a fast access time of 10 ns. The parallel interface allows for simultaneous transfer of 8 bits of data.

When a read operation is initiated, the address lines (A0-A39) specify the location of the desired data. The data is then output on the DQ0-DQ7 pins. Similarly, during a write operation, the address lines are used to specify the destination location, and the data to be written is

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V3558SA100BG8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V3558SA100BG8 in technical solutions:

  1. Q: What is IDT71V3558SA100BG8? A: IDT71V3558SA100BG8 is a synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3558SA100BG8? A: IDT71V3558SA100BG8 has a capacity of 4 Megabits (512K x 8 bits).

  3. Q: What is the operating voltage range for IDT71V3558SA100BG8? A: The operating voltage range for IDT71V3558SA100BG8 is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V3558SA100BG8? A: IDT71V3558SA100BG8 has an access time of 10 ns, which means it takes approximately 10 nanoseconds to read or write data.

  5. Q: Can IDT71V3558SA100BG8 be used in battery-powered devices? A: Yes, IDT71V3558SA100BG8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Q: Is IDT71V3558SA100BG8 compatible with other memory chips? A: Yes, IDT71V3558SA100BG8 is compatible with other SRAM chips that have similar specifications and interface requirements.

  7. Q: What is the package type of IDT71V3558SA100BG8? A: IDT71V3558SA100BG8 is available in a 32-pin plastic SOJ (Small Outline J-lead) package.

  8. Q: Can IDT71V3558SA100BG8 be used in high-speed applications? A: Yes, IDT71V3558SA100BG8 can be used in high-speed applications as it has a relatively fast access time of 10 ns.

  9. Q: Does IDT71V3558SA100BG8 support simultaneous read and write operations? A: No, IDT71V3558SA100BG8 does not support simultaneous read and write operations. It operates in a single-read/single-write mode.

  10. Q: What are some typical applications of IDT71V3558SA100BG8? A: IDT71V3558SA100BG8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other embedded systems where fast and reliable memory is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.