IDT71V3559SA75BG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed synchronous static random-access memory (SRAM)
  • Low power consumption
  • Large storage capacity
• Package: Ball Grid Array (BGA)
• Essence: Provides fast and reliable data storage for various electronic devices
• Packaging/Quantity: Typically sold in reels containing multiple units

Specifications

• Model: IDT71V3559SA75BG
• Technology: Synchronous SRAM
• Organization: 256K x 36 bits
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 119

Detailed Pin Configuration

The IDT71V3559SA75BG has a total of 119 pins, each serving a specific purpose. The pin configuration is as follows:

1. VDDQ: Power supply voltage for I/O buffers
2. DQ0-DQ35: Data input/output pins
3. A0-A17: Address input pins
4. WE#: Write enable control pin
5. OE#: Output enable control pin
6. CE#: Chip enable control pin
7. CLK: Clock input pin
8. VDD: Power supply voltage for core logic
9. GND: Ground

(Note: This is just a partial list of pins for illustration purposes.)

Functional Features

• High-speed operation: The IDT71V3559SA75BG offers fast access times, making it suitable for applications requiring quick data retrieval.
• Low power consumption: Designed with power-saving features, this IC minimizes energy usage, extending battery life in portable devices.
• Large storage capacity: With an organization of 256K x 36 bits, it provides ample memory space for storing data.
• Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable and accurate data transfer.

Advantages and Disadvantages

Advantages: - High-speed performance - Low power consumption - Large storage capacity - Reliable synchronous operation

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited compatibility with certain older systems

Working Principles

The IDT71V3559SA75BG operates based on the principles of synchronous SRAM. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device utilizes a clock signal to synchronize read and write operations, ensuring data integrity and preventing conflicts between multiple access attempts.

Detailed Application Field Plans

The IDT71V3559SA75BG finds applications in various electronic devices, including but not limited to: - Networking equipment - Telecommunications systems - Industrial control systems - Medical devices - Automotive electronics

Its high-speed operation, low power consumption, and large storage capacity make it suitable for demanding applications that require fast and reliable data storage.

Detailed and Complete Alternative Models

1. IDT71V3558S133BGI: Similar to IDT71V3559SA75BG, but with a different access time (13.3 ns).
2. IDT71V3557S85BGI: Similar to IDT71V3559SA75BG, but with a smaller storage capacity (128K x 36 bits).
3. IDT71V3556S133BGI: Similar to IDT71V3559SA75BG, but with a different access time (13.3 ns) and smaller storage capacity (128K x 36 bits).

(Note: This is just a sample list of alternative models. There may be other options available in the market.)

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