IDT71V35761YSA200BQI8

Product Overview

Category

The IDT71V35761YSA200BQI8 belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and data processing.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V35761YSA200BQI8 is available in a compact and durable package, ensuring easy integration into various electronic systems.

Essence

This IC serves as a crucial component in enhancing the overall performance and efficiency of electronic devices by providing reliable and high-speed memory storage capabilities.

Packaging/Quantity

The IDT71V35761YSA200BQI8 is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V35761YSA200BQI8
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 1 Megabit (128K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Organization: 128K words x 8 bits
• Package Type: 100-pin Thin Quad Flat Pack (TQFP)

Detailed Pin Configuration

The IDT71V35761YSA200BQI8 has a total of 100 pins, each serving a specific function within the circuit. The pin configuration is as follows:

(Pin diagram here)

Functional Features

• High-speed data access and retrieval
• Non-volatile storage capability
• Low power consumption during standby mode
• Easy integration into existing electronic systems
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Fast data access and retrieval, enhancing overall system performance
• Large storage capacity for handling complex applications
• Low power consumption, contributing to energy efficiency
• Reliable operation, ensuring data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of storage capacity
• Susceptible to data loss in case of power failure

Working Principles

The IDT71V35761YSA200BQI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast and direct access without the need for refreshing. The IC maintains data integrity as long as power is supplied.

Detailed Application Field Plans

The IDT71V35761YSA200BQI8 finds extensive application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. Model: MT48LC4M32B2P-6A

   • Manufacturer: Micron Technology Inc.
   • Capacity: 128 Megabit
   • Package Type: 90-ball Ball Grid Array (BGA)

2. Model: CY7C1049G30-10ZSXE

   • Manufacturer: Cypress Semiconductor Corp.
   • Capacity: 512 Kilobit
   • Package Type: 44-pin TSOP

3. Model: AS6C4008-55PCN

   • Manufacturer: Alliance Memory Inc.
   • Capacity: 4 Megabit
   • Package Type: 32-pin PDIP

(Note: The above alternative models are provided for reference purposes and may have different specifications and characteristics.)

In conclusion, the IDT71V35761YSA200BQI8 is a high-performance integrated circuit that offers reliable and fast memory storage capabilities. Its compact package, low power consumption, and compatibility with various electronic systems make it an ideal choice for a wide range of applications.