IDT71V3576YS150PF8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: PF8 package
• Essence: Non-volatile memory
• Packaging/Quantity: Single unit packaging

Specifications

• Model: IDT71V3576YS150PF8
• Memory Type: Static Random Access Memory (SRAM)
• Density: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 15 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C
• Data Retention: 10 years
• Package Type: 100-pin Thin Quad Flat Pack (TQFP)

Pin Configuration

The IDT71V3576YS150PF8 has a total of 100 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE1
19. /CE2
20. /OE
21. /WE
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. /UBS
31. /LBS
32. /BYTE
33. VSS
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. VCC
43. /ZZ
44. /GND
45. /ZZ
46. /GND
47. /ZZ
48. /GND
49. /ZZ
50. /GND
51. /ZZ
52. /GND
53. /ZZ
54. /GND
55. /ZZ
56. /GND
57. /ZZ
58. /GND
59. /ZZ
60. /GND
61. /ZZ
62. /GND
63. /ZZ
64. /GND
65. /ZZ
66. /GND
67. /ZZ
68. /GND
69. /ZZ
70. /GND
71. /ZZ
72. /GND
73. /ZZ
74. /GND
75. /ZZ
76. /GND
77. /ZZ
78. /GND
79. /ZZ
80. /GND
81. /ZZ
82. /GND
83. /ZZ
84. /GND
85. /ZZ
86. /GND
87. /ZZ
88. /GND
89. /ZZ
90. /GND
91. /ZZ
92. /GND
93. /ZZ
94. /GND
95. /ZZ
96. /GND
97. /ZZ
98. /GND
99. /ZZ
100. /GND

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy efficiency
• Easy integration into existing circuit designs
• Reliable performance with high data retention

Advantages and Disadvantages

Advantages: - Fast access time for quick data retrieval - Large storage capacity for storing a significant amount of data - Low power consumption helps conserve energy - Reliable performance ensures data integrity - Easy integration into various electronic devices

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited data retention period without power supply - Sensitive to electromagnetic interference (EMI) - Requires careful handling and storage to avoid damage

Working Principles

The IDT71V3576YS150PF8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read