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IDT71V3579S85PF8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
- Package: 85-ball Fine-Pitch Ball Grid Array (FBGA)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Type: Synchronous SRAM
- Density: 4 Megabits (4Mb)
- Organization: 512K words x 8 bits
- Operating Voltage: 3.3V
- Access Time: 8.5 ns
- Clock Frequency: Up to 117 MHz
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 10 years
- Package Dimensions: 10mm x 13mm
Pin Configuration
The IDT71V3579S85PF8 has a total of 85 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- VDD
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- VSS
Functional Features
- High-speed operation allows for quick data access and retrieval.
- Low-power consumption makes it suitable for battery-powered devices.
- Synchronous design ensures reliable and synchronized data transfers.
- 512K x 8 organization provides ample storage capacity.
- Wide operating temperature range enables usage in various environments.
Advantages and Disadvantages
Advantages: - Fast access time and clock frequency allow for efficient data processing. - Low power consumption extends battery life in portable devices. - Reliable and durable memory storage solution. - Wide operating temperature range ensures versatility.
Disadvantages: - Limited storage capacity compared to higher-density memory devices. - Higher cost per megabit compared to some other memory technologies. - Requires careful handling due to the small package size and delicate pins.
Working Principles
The IDT71V3579S85PF8 is a synchronous SRAM that stores data using flip-flops. It operates based on an external clock signal, which synchronizes the read and write operations. The memory cells are organized into 512K words, with each word consisting of 8 bits. When a read operation is initiated, the addressed data is retrieved from the memory array and made available at the output pins. During a write operation, the input data is stored in the specified memory location. The device operates at a voltage of 3.3V and can be accessed at high speeds with low power consumption.
Detailed Application Field Plans
The IDT71V3579S85PF8 is commonly used in various applications that require fast and reliable data storage and retrieval capabilities.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V3579S85PF8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V3579S85PF8 in technical solutions:
Q: What is IDT71V3579S85PF8? A: IDT71V3579S85PF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3579S85PF8? A: The IDT71V3579S85PF8 has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).
Q: What is the operating voltage range for IDT71V3579S85PF8? A: The operating voltage range for IDT71V3579S85PF8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3579S85PF8? A: The access time of IDT71V3579S85PF8 is 8.5 nanoseconds (ns), which refers to the time it takes to read or write data.
Q: What is the pin configuration of IDT71V3579S85PF8? A: IDT71V3579S85PF8 has a 32-pin Small Outline J-lead (SOJ) package with specific pins designated for power, ground, address, data, and control signals.
Q: Can IDT71V3579S85PF8 be used in battery-powered devices? A: Yes, IDT71V3579S85PF8 can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.
Q: Is IDT71V3579S85PF8 compatible with other SRAM devices? A: Yes, IDT71V3579S85PF8 is compatible with other SRAM devices that have similar voltage requirements and pin configurations.
Q: What are some typical applications of IDT71V3579S85PF8? A: IDT71V3579S85PF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable data storage is required.
Q: Can IDT71V3579S85PF8 be used as a cache memory in microprocessors? A: Yes, IDT71V3579S85PF8 can be used as a cache memory in microprocessors to improve system performance by providing faster access to frequently used data.
Q: Are there any specific precautions or guidelines for using IDT71V3579S85PF8? A: It is recommended to follow the datasheet provided by the manufacturer for proper handling, storage, and electrical characteristics of IDT71V3579S85PF8. Additionally, attention should be given to signal integrity and noise considerations during PCB layout and design.
Please note that these answers are general and may vary depending on specific application requirements and design considerations.