IDT71V416L10BEGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Range: 3.0V - 3.6V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 5 mA (typical)
• Package Dimensions: 12.8 mm x 20.0 mm x 1.2 mm

Detailed Pin Configuration

The IDT71V416L10BEGI has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Byte Enables
7. VCC: Power Supply
8. GND: Ground

Please refer to the datasheet for a complete pinout diagram.

Functional Features

• High-speed operation: The IDT71V416L10BEGI offers a fast access time of 10 ns, allowing for quick data retrieval.
• Low power consumption: It operates at a low standby current of 5 mA, making it energy-efficient.
• Synchronous operation: The memory device synchronizes with the system clock, ensuring reliable data transfer.
• Easy integration: The 44-pin TSOP package allows for easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption helps conserve energy. - Synchronous operation ensures reliable data transfer. - Easy integration due to the compact TSOP package.

Disadvantages: - Limited storage capacity (4 Meg x 16). - Higher cost compared to other memory devices with lower specifications.

Working Principles

The IDT71V416L10BEGI is a synchronous SRAM that stores and retrieves data using an internal clock signal. When the chip enable (CE) and output enable (OE) signals are activated, the device can read or write data from/to the addressed memory location. The byte enable (UB/LB) pins allow for selective reading/writing of individual bytes within a word.

Detailed Application Field Plans

The IDT71V416L10BEGI is commonly used in applications that require high-speed and low-power memory, such as:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment: Provides fast data buffering capabilities in routers, switches, and network appliances.
3. Telecommunications: Used in base stations, voice/data switches, and communication infrastructure for efficient data handling.
4. Industrial automation: Enables quick data storage and retrieval in control systems, PLCs, and robotics.
5. Automotive electronics: Used in advanced driver assistance systems (ADAS), infotainment systems, and engine control units (ECUs).

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10
2. Micron MT45W4MW16BCGB-701 WT
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI#B0
5. Nanya NT5DS16M16CS-5T

These alternative models offer similar specifications and functionality to the IDT71V416L10BEGI and can be considered as alternatives based on specific requirements.

Note: The content provided above is a sample structure for an encyclopedia entry and may not reflect actual information about the product IDT71V416L10BEGI.