IDT, Integrated Device Technology Inc
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IDT71V416S10BEI
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IDT71V416S10BEI

Product Overview

Category

The IDT71V416S10BEI belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This chip is primarily used for high-speed data storage and retrieval in various electronic devices.

Characteristics

  • High-speed operation
  • Low power consumption
  • Non-volatile memory
  • Reliable performance
  • Wide temperature range

Package

The IDT71V416S10BEI is available in a 44-pin Plastic Thin Quad Flat Pack (TQFP) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

The IDT71V416S10BEI is typically packaged in reels, with each reel containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Size: 4 Megabits (4M)
  • Organization: 512K x 8
  • Supply Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 10 µA (typical)
  • Package Type: TQFP-44

Detailed Pin Configuration

The IDT71V416S10BEI has a total of 44 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. VCC
  10. WE#
  11. OE#
  12. I/O0
  13. I/O1
  14. I/O2
  15. I/O3
  16. I/O4
  17. I/O5
  18. I/O6
  19. I/O7
  20. GND
  21. A8
  22. A9
  23. A10
  24. A11
  25. A12
  26. A13
  27. A14
  28. A15
  29. CE#
  30. UB#
  31. LB#
  32. I/O8
  33. I/O9
  34. I/O10
  35. I/O11
  36. I/O12
  37. I/O13
  38. I/O14
  39. I/O15
  40. VCC
  41. A16
  42. A17
  43. A18
  44. GND

Functional Features

  • High-speed data access
  • Non-volatile memory retention
  • Low power consumption in standby mode
  • Easy integration into electronic devices
  • Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

  • Fast data storage and retrieval
  • Low power consumption
  • Wide temperature range operation
  • Reliable performance

Disadvantages

  • Limited memory size (4 Megabits)
  • Higher cost compared to other memory technologies

Working Principles

The IDT71V416S10BEI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses a combination of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The IDT71V416S10BEI finds applications in various electronic devices, including but not limited to: - Computers and laptops - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

  1. IDT71V416L10PHG
  2. IDT71V416L10PHI
  3. IDT71V416L10PH

These alternative models offer similar functionality and specifications to the IDT71V416S10BEI, providing options for different package types or additional features.

In conclusion, the IDT71V416S10BEI is a high-speed SRAM chip that offers reliable data storage and retrieval capabilities. With its low power consumption and wide temperature range operation, it finds applications in various electronic devices across different industries. While it has certain limitations in terms of memory size and cost, there are alternative models available to suit specific requirements.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V416S10BEI en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V416S10BEI in technical solutions:

  1. Q: What is IDT71V416S10BEI? A: IDT71V416S10BEI is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V416S10BEI? A: The IDT71V416S10BEI has a capacity of 4 Megabits (Mbit), which is equivalent to 512 Kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V416S10BEI? A: The operating voltage range for IDT71V416S10BEI is typically between 4.5V and 5.5V.

  4. Q: What is the access time of IDT71V416S10BEI? A: The access time of IDT71V416S10BEI is 10 nanoseconds (ns), hence the "10" in its part number.

  5. Q: Is IDT71V416S10BEI suitable for high-speed applications? A: Yes, IDT71V416S10BEI is designed for high-speed applications due to its fast access time and synchronous operation.

  6. Q: Can IDT71V416S10BEI be used in battery-powered devices? A: Yes, IDT71V416S10BEI can be used in battery-powered devices as long as the operating voltage range is within the device's power supply limits.

  7. Q: Does IDT71V416S10BEI support multiple read/write operations simultaneously? A: Yes, IDT71V416S10BEI supports simultaneous read and write operations, making it suitable for applications requiring concurrent data access.

  8. Q: What is the package type of IDT71V416S10BEI? A: IDT71V416S10BEI is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  9. Q: Can IDT71V416S10BEI be used as a drop-in replacement for other SRAM chips? A: In most cases, yes. However, it's always recommended to consult the datasheet and ensure compatibility with the specific application.

  10. Q: Are there any special considerations for interfacing IDT71V416S10BEI with microcontrollers or processors? A: While IDT71V416S10BEI follows industry-standard interfaces, it's important to review the datasheet and consider factors like voltage levels, timing requirements, and bus protocols to ensure proper integration with the target microcontroller or processor.

Please note that these answers are general and may vary depending on the specific requirements and use case of the technical solution.