IDT71V416S15PHI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V416S15PHI is a high-speed, low-power CMOS static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance - Easy integration into existing circuitry

Package: The IDT71V416S15PHI is available in a 44-pin plastic thin quad flat pack (TQFP) package.

Essence: This IC serves as a crucial component in electronic devices by providing fast and reliable data storage capabilities.

Packaging/Quantity: The IDT71V416S15PHI is typically sold in reels containing a quantity of 250 units per reel.

Specifications

• Memory Size: 4 Megabits (4M x 1)
• Access Time: 15 ns
• Operating Voltage: 3.3V
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V (min)

Detailed Pin Configuration

The IDT71V416S15PHI features a total of 44 pins, each serving a specific function. Here is a detailed pin configuration:

1. A0-A21: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB/LB: Byte Control
7. VCC: Power Supply
8. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Large storage capacity accommodates a significant amount of data.
• Reliable performance guarantees data integrity and stability.
• Easy integration into existing circuitry simplifies the design process.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Reliable performance ensures data integrity and system stability. - Easy integration simplifies the design and manufacturing process.

Disadvantages: - Limited compatibility with older systems that require different voltage levels or pin configurations. - Relatively higher cost compared to alternative memory technologies.

Working Principles

The IDT71V416S15PHI operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The address inputs are used to select specific memory locations, while the data inputs/outputs facilitate the transfer of information between the IC and other components. The control signals (WE, OE, CE1, CE2, UB/LB) govern the read and write operations, enabling efficient data manipulation.

Detailed Application Field Plans

The IDT71V416S15PHI finds application in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416S15PHI, but with a lower access time of 10 ns.
2. IDT71V416LS: A low-power variant of IDT71V416S15PHI with reduced standby current.
3. IDT71V416S20: A higher-speed version of IDT71V416S15PHI with an access time of 20 ns.

(Note: The list above includes only a few alternative models for reference.)

In conclusion, the IDT71V416S15PHI is a high-speed, low-power CMOS SRAM that offers reliable performance and large storage capacity. Its easy integration and wide range of applications make it a valuable component in various electronic devices and systems.