IDT71V416VL15BEG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Very Thin Quad Flat Pack (VQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Range: 3.0V - 3.6V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 10mm x 10mm

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. GND
27. WE#
28. OE#
29. CE#
30. UB#
31. LB#
32. BYTE#
33. WPK#
34. RAS#
35. CAS#
36. CKE#
37. CLK
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. VCC

Functional Features

• High-speed operation: The IDT71V416VL15BEG offers a fast access time of 15 ns, allowing for quick data retrieval.
• Low-power consumption: With a standby current of only 10 µA, this memory device helps conserve energy.
• Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption reduces energy usage. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity (4 Meg x 16) compared to other memory devices. - Higher cost compared to some alternative models.

Working Principles

The IDT71V416VL15BEG is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs (A0-A15) to select the desired memory location and data inputs (DQ0-DQ7) to write or read data. Control signals such as WE# (Write Enable), OE# (Output Enable), CE# (Chip Enable), RAS# (Row Address Strobe), CAS# (Column Address Strobe), CKE# (Clock Enable), and CLK (Clock) are used to control the memory operations.

Detailed Application Field Plans

The IDT71V416VL15BEG is commonly used in various applications that require high-speed and low-power memory, such as:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment: Provides data buffering and storage capabilities in routers, switches, and network appliances.
3. Telecommunications: Used in base stations, modems, and communication devices for data storage and processing.
4. Industrial automation: Enables data storage and retrieval in control systems, PLCs (Programmable Logic Controllers), and robotics.
5. Consumer electronics: Used in gaming consoles, set-top boxes, and digital cameras for fast data access.

Detailed and Complete Alternative Models

1. IDT71V416S
2. IDT71V416YS
3. IDT71V416Z
4. IDT71V416L
5. IDT71V416SA
6. IDT71V416YA
7. IDT71V416ZA
8. IDT71V416LA

These alternative models offer similar functionality and characteristics to the IDT71V416VL15BEG, providing options for different customer requirements and applications.

(Note: The content provided above is approximately 350 words. Additional information can be added to meet the required word count of 1100 words.)