IDT, Integrated Device Technology Inc
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IDT71V416VL15BEG8
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IDT71V416VL15BEG8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Low power consumption
    • Large storage capacity
  • Package: 44-pin TSOP (Thin Small Outline Package)
  • Essence: Non-volatile Static Random Access Memory (nvSRAM)
  • Packaging/Quantity: Available in reels, 250 units per reel

Specifications

  • Memory Size: 4 Megabits (4Mbit)
  • Organization: 512K x 8 bits
  • Operating Voltage: 3.0V to 3.6V
  • Access Time: 15 ns
  • Standby Current: 20 µA (typical)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416VL15BEG8 has a total of 44 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. OE#
  18. CE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. VCC
  25. GND
  26. I/O4
  27. I/O5
  28. I/O6
  29. I/O7
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC

Functional Features

  • Non-volatile memory: Retains data even when power is lost
  • High-speed performance: 15 ns access time for quick data retrieval
  • Low power consumption: Operates at a standby current of only 20 µA
  • Large storage capacity: 4 Megabits (512K x 8 bits)
  • Easy integration: Compatible with standard memory interfaces

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention - High-speed performance allows for quick data access - Low power consumption extends battery life - Large storage capacity accommodates extensive data requirements - Easy integration with existing memory systems

Disadvantages: - Relatively higher cost compared to traditional volatile memory - Limited availability in certain package options - Sensitive to electrostatic discharge (ESD) during handling

Working Principles

The IDT71V416VL15BEG8 is a non-volatile static random access memory (nvSRAM). It combines the benefits of both SRAM and non-volatile memory technologies. The device utilizes a specialized circuitry that automatically saves the contents of the SRAM array to non-volatile elements during power loss or system shutdown. This ensures that the data remains intact even when power is restored.

Detailed Application Field Plans

The IDT71V416VL15BEG8 is commonly used in various applications, including:

  1. Industrial control systems
  2. Automotive electronics
  3. Medical equipment
  4. Communication infrastructure
  5. Aerospace and defense systems

Detailed and Complete Alternative Models

  1. IDT71V416LS12PHG: 4Mbit nvSRAM, 12 ns access time, 44-pin TSOP package
  2. IDT71V416S10PHG: 4Mbit nvSRAM, 10 ns access time, 44-pin TSOP package
  3. IDT71V416S15PHG: 4Mbit nvSRAM, 15 ns access time, 44-pin TSOP package
  4. IDT71V416S20PHG: 4Mbit nvSRAM, 20 ns access time, 44-pin TSOP package

These alternative models offer different access times to suit specific application requirements while maintaining the same storage capacity and package type.

Note: The above information is subject to change. Please refer to the manufacturer's datasheet for the most up-to-date specifications and details.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V416VL15BEG8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V416VL15BEG8 in technical solutions:

  1. Question: What is IDT71V416VL15BEG8?
    Answer: IDT71V416VL15BEG8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V416VL15BEG8?
    Answer: IDT71V416VL15BEG8 has a capacity of 4 megabits (Mbit), which is equivalent to 512 kilobytes (KB).

  3. Question: What is the operating voltage range for IDT71V416VL15BEG8?
    Answer: The operating voltage range for IDT71V416VL15BEG8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V416VL15BEG8?
    Answer: The access time of IDT71V416VL15BEG8 is 15 nanoseconds (ns), meaning it takes approximately 15 ns to read or write data.

  5. Question: Can IDT71V416VL15BEG8 be used in battery-powered devices?
    Answer: Yes, IDT71V416VL15BEG8 can be used in battery-powered devices as long as the operating voltage requirements are met.

  6. Question: Is IDT71V416VL15BEG8 compatible with other SRAMs?
    Answer: IDT71V416VL15BEG8 follows industry-standard pinout and functionality, making it compatible with other similar SRAMs.

  7. Question: What is the package type of IDT71V416VL15BEG8?
    Answer: IDT71V416VL15BEG8 is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  8. Question: Can IDT71V416VL15BEG8 be used in high-speed applications?
    Answer: Yes, IDT71V416VL15BEG8 has a relatively fast access time of 15 ns, making it suitable for many high-speed applications.

  9. Question: Does IDT71V416VL15BEG8 support multiple read/write operations simultaneously?
    Answer: No, IDT71V416VL15BEG8 is a synchronous SRAM and does not support simultaneous read/write operations.

  10. Question: What are some typical applications of IDT71V416VL15BEG8?
    Answer: IDT71V416VL15BEG8 can be used in various applications such as networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable memory is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.