Consulte las especificaciones para obtener detalles del producto.
IDT71V416VS12PHGI8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
- Package: 100-pin plastic grid array (PGA)
- Essence: Stores and retrieves digital information in electronic systems
- Packaging/Quantity: Available in trays or reels, quantity varies based on customer requirements
Specifications
- Organization: 4 Meg x 16
- Voltage Range: 3.0V - 3.6V
- Access Time: 12 ns
- Operating Temperature: -40°C to +85°C
- Standby Current: 10 µA (typical)
- Package Dimensions: 14mm x 20mm
Detailed Pin Configuration
The IDT71V416VS12PHGI8 has a total of 100 pins. The pin configuration is as follows:
- VDDQ
- DQ15
- DQ14
- DQ13
- DQ12
- DQ11
- DQ10
- DQ9
- DQ8
- VSSQ
- DQ7
- DQ6
- DQ5
- DQ4
- DQ3
- DQ2
- DQ1
- DQ0
- VDDQ
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- VSSQ
- CE2#
- CE1#
- WE#
- OE#
- UB#
- LB#
- CE3#
- CE4#
- CE5#
- CE6#
- CE7#
- CE8#
- CE9#
- CE10#
- CE11#
- CE12#
- CE13#
- CE14#
- CE15#
- CE16#
- CE17#
- CE18#
- CE19#
- CE20#
- CE21#
- CE22#
- CE23#
- CE24#
- CE25#
- CE26#
- CE27#
- CE28#
- CE29#
- CE30#
- CE31#
- CE32#
- CE33#
- CE34#
- CE35#
- CE36#
- CE37#
- CE38#
- CE39#
- CE40#
- CE41#
- CE42#
- CE43#
- CE44#
- CE45#
- CE46#
- CE47#
- CE48#
- CE49#
- CE50#
- CE51#
- CE52#
- CE53#
- CE54#
- CE55#
- VDD
Functional Features
- High-speed operation: The IDT71V416VS12PHGI8 offers fast access times, making it suitable for applications that require quick data retrieval.
- Low-power consumption: This memory device is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
- Synchronous operation: The device operates synchronously with the system clock, ensuring reliable and accurate data transfer.
- Easy integration: The IDT71V416VS12PHGI8 can be easily integrated into various electronic systems due to its standard pin configuration and package.
Advantages and Disadvantages
Advantages: - High-speed operation allows for quick data access - Low-power consumption prolongs battery life in portable devices - Synchronous operation ensures reliable data transfer - Easy integration into different electronic systems
Disadvantages: - Limited storage capacity compared to other memory devices - Higher cost per bit compared to larger memory modules
Working Principles
The IDT71V416VS12PHGI8 is a synchronous SRAM that stores digital information using flip-flops. It operates by receiving address inputs, control signals, and data inputs from the system. When a read operation is initiated, the device retrieves the requested data from the specified memory location and outputs it to the system. During a write operation, the device accepts data inputs and writes them to the specified memory location. The synchronous operation ensures proper synchronization with the
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V416VS12PHGI8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V416VS12PHGI8 in technical solutions:
Q: What is the IDT71V416VS12PHGI8? A: The IDT71V416VS12PHGI8 is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 4 megabits (4M) organized as 512K words by 8 bits.
Q: What are the key features of the IDT71V416VS12PHGI8? A: Some key features include a fast access time of 12 ns, low power consumption, wide operating voltage range, and a synchronous interface.
Q: What are some typical applications for the IDT71V416VS12PHGI8? A: The IDT71V416VS12PHGI8 is commonly used in networking equipment, telecommunications systems, industrial automation, medical devices, and other embedded systems that require high-speed and reliable memory.
Q: Can the IDT71V416VS12PHGI8 be used as a main memory in a computer system? A: Yes, it can be used as a main memory in certain low-power or specialized computer systems, but it is more commonly used as a cache memory or for storing critical data.
Q: What is the operating voltage range for the IDT71V416VS12PHGI8? A: The IDT71V416VS12PHGI8 operates within a voltage range of 3.0V to 3.6V.
Q: Does the IDT71V416VS12PHGI8 support multiple read and write operations simultaneously? A: No, the IDT71V416VS12PHGI8 is a synchronous SRAM and supports only one read or write operation at a time.
Q: Can the IDT71V416VS12PHGI8 be used in high-temperature environments? A: Yes, the IDT71V416VS12PHGI8 is designed to operate within an extended temperature range of -40°C to +85°C, making it suitable for various industrial applications.
Q: What is the power consumption of the IDT71V416VS12PHGI8? A: The IDT71V416VS12PHGI8 has low power consumption, with typical values of around 200mW during active operation and less than 1mW in standby mode.
Q: Does the IDT71V416VS12PHGI8 have any built-in error correction capabilities? A: No, the IDT71V416VS12PHGI8 does not have built-in error correction capabilities. External error detection and correction techniques may need to be implemented if required.
Q: Are there any specific timing requirements for interfacing with the IDT71V416VS12PHGI8? A: Yes, the IDT71V416VS12PHGI8 requires proper adherence to its specified clock frequency, setup and hold times, and other timing parameters as outlined in the datasheet for reliable operation.
Please note that these answers are general and may vary depending on the specific application and requirements. It is always recommended to refer to the official documentation and datasheet provided by the manufacturer for accurate and detailed information.