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IDT71V416YL10PH8

IDT71V416YL10PH8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Low power consumption
    • Large storage capacity
  • Package: Plastic SOJ (Small Outline J-lead)
  • Essence: Non-volatile memory chip
  • Packaging/Quantity: Tray packaging, quantity varies

Specifications

  • Model: IDT71V416YL10PH8
  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 4 Meg x 16
  • Voltage Supply: 3.3V
  • Speed: 10 nanoseconds (ns)
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 44 pins

Detailed Pin Configuration

The IDT71V416YL10PH8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. I/O8
  29. I/O9
  30. I/O10
  31. I/O11
  32. I/O12
  33. I/O13
  34. I/O14
  35. I/O15
  36. GND
  37. NC
  38. NC
  39. NC
  40. VCC
  41. VCCQ
  42. A16
  43. A17
  44. A18

Functional Features

  • High-speed access: The IDT71V416YL10PH8 offers fast data retrieval and storage capabilities, making it suitable for applications requiring quick access to memory.
  • Low power consumption: This memory chip is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
  • Large storage capacity: With a capacity of 4 Meg x 16, the IDT71V416YL10PH8 provides ample space for storing data.
  • Reliable performance: The chip's static random access memory technology ensures reliable and stable operation.

Advantages and Disadvantages

Advantages: - High-speed performance enables rapid data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable performance ensures consistent operation.

Disadvantages: - Limited compatibility: The IDT71V416YL10PH8 may not be compatible with all systems due to its specific pin configuration and voltage requirements. - Relatively high cost compared to other memory options.

Working Principles

The IDT71V416YL10PH8 operates based on static random access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. When an address is provided, the chip retrieves the corresponding data from the memory array and makes it available for reading or writing.

Detailed Application Field Plans

The IDT71V416YL10PH8 can be used in various applications that require high-speed and reliable memory storage. Some potential application fields include:

  1. Computer Systems: The chip can be utilized in computer systems as cache memory or for storing critical system data.
  2. Networking Equipment: It can be employed in routers, switches, and other networking devices to store routing tables and buffer data.
  3. Telecommunications: The memory chip can be used in telecommunication equipment for storing call records, configuration data, and firmware.
  4. Industrial Control Systems: It finds application in industrial control systems for storing program code, sensor data, and system parameters.

Detailed and Complete Alternative Models

  1. IDT71V416S10PH
  2. IDT71V416S12PH
  3. IDT71V416S15PH
  4. IDT71V416S20PH
  5. IDT71V416S25PH

These alternative models offer similar specifications and functionality to the IDT71V416YL10PH8, providing options for different speed requirements or voltage ranges.

(Note: The above list is not exhaustive and may vary based on availability and technological advancements.)

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V416YL10PH8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V416YL10PH8 in technical solutions:

  1. Q: What is IDT71V416YL10PH8? A: IDT71V416YL10PH8 is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 Megabits (Mbit).

  2. Q: What are the key features of IDT71V416YL10PH8? A: Some key features include a 10 ns access time, low power consumption, asynchronous operation, and a wide operating voltage range.

  3. Q: In what applications can IDT71V416YL10PH8 be used? A: IDT71V416YL10PH8 can be used in various applications such as networking equipment, telecommunications systems, industrial automation, and embedded systems.

  4. Q: What is the operating voltage range for IDT71V416YL10PH8? A: The operating voltage range for IDT71V416YL10PH8 is typically between 4.5V and 5.5V.

  5. Q: How much power does IDT71V416YL10PH8 consume during operation? A: IDT71V416YL10PH8 has a low power consumption of typically 250mW during active operation and 1mW during standby mode.

  6. Q: Can IDT71V416YL10PH8 operate at high temperatures? A: Yes, IDT71V416YL10PH8 is designed to operate reliably at a wide temperature range of -40°C to +85°C.

  7. Q: Does IDT71V416YL10PH8 support simultaneous read and write operations? A: No, IDT71V416YL10PH8 does not support simultaneous read and write operations. It is an asynchronous SRAM device.

  8. Q: What is the package type for IDT71V416YL10PH8? A: IDT71V416YL10PH8 is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  9. Q: Can IDT71V416YL10PH8 be used as a drop-in replacement for other SRAM devices? A: Yes, IDT71V416YL10PH8 is designed to be pin-compatible with other 4Mbit SRAM devices, making it easy to replace them in existing designs.

  10. Q: Does IDT71V416YL10PH8 have any built-in error correction capabilities? A: No, IDT71V416YL10PH8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

Please note that the answers provided here are general and may vary depending on specific datasheet specifications and application requirements.