IDT71V416YS10PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V ± 0.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 100 years
• Standby Current: 10 mA (typical)
• Active Current: 80 mA (typical)

Pin Configuration

The IDT71V416YS10PH8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ15
3. DQ14
4. DQ13
5. DQ12
6. DQ11
7. DQ10
8. DQ9
9. DQ8
10. GND
11. DQ7
12. DQ6
13. DQ5
14. DQ4
15. DQ3
16. DQ2
17. DQ1
18. DQ0
19. VCC
20. WE#
21. OE#
22. CE#
23. UB/LB#
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. A8
33. A9
34. A10
35. A11
36. A12
37. A13
38. A14
39. A15
40. A16
41. A17
42. A18
43. A19
44. GND

Functional Features

• Synchronous operation with clock enable (CE#) and output enable (OE#) signals
• Byte write capability
• Automatic power-down mode when deselected
• Three-state outputs for bus-oriented applications
• Low standby and active power consumption
• Single 3.3V power supply

Advantages and Disadvantages

Advantages: - High-speed access time of 10 ns - Low-power consumption - Reliable data retention - Easy integration into various electronic systems - Suitable for bus-oriented applications

Disadvantages: - Limited memory size (4 Megabits) - Higher cost compared to lower capacity memory devices - Requires proper handling and storage conditions to maintain data integrity

Working Principles

The IDT71V416YS10PH8 is a synchronous SRAM that operates based on the synchronous circuitry and timing signals provided by the system. It uses a clock enable (CE#) signal to control the input/output operations and an output enable (OE#) signal to enable/disable the output buffers. The device supports byte write capability, allowing individual bytes within the memory to be written independently.

When not in use, the memory enters a power-down mode to minimize power consumption. The three-state outputs allow multiple devices to share a common bus without interfering with each other's signals.

Detailed Application Field Plans

The IDT71V416YS10PH8 is commonly used in various applications that require high-speed and reliable data storage and retrieval. Some of the specific application fields include:

1. Telecommunications equipment
2. Networking devices
3. Industrial control systems
4. Medical equipment
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

• IDT71V416L10PH - 4 Megabit (4M x 16) Low-power SRAM, 10 ns access time, 44-pin TQFP package
• IDT71V416S10PH - 4 Megabit (4M x 16) Synchronous SRAM, 10 ns access time, 44-pin TQFP package
• IDT71V416YS12PH - 4 Megabit (4M x 16) Synchronous SRAM, 12 ns access time, 44-pin TQFP package
• IDT71V416ZS10PH - 4 Megabit (4M x 16) Zero Bus Turnaround SRAM, 10 ns access time, 44-pin TQFP package

These alternative models offer similar functionality with slight variations in access time, power consumption,