IDT71V416YS15Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin plastic thin small outline package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Range: 3.0V - 3.6V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 12.8mm x 20.2mm x 1.05mm

Detailed Pin Configuration

The IDT71V416YS15Y has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper Byte/Lower Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V416YS15Y offers a fast access time of 15 ns, allowing for quick data retrieval.
• Low-power consumption: With a standby current of only 10 µA, this memory device helps conserve energy.
• Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.
• Easy integration: The 44-pin TSOP package allows for easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption helps reduce energy usage. - Synchronous operation ensures reliable data transfer. - Compact package size facilitates integration.

Disadvantages: - Limited storage capacity (4 Meg x 16). - Relatively higher cost compared to other memory devices with similar specifications.

Working Principles

The IDT71V416YS15Y is a synchronous SRAM that stores and retrieves data using an array of flip-flops. It operates by synchronizing its internal operations with an external clock signal. When the chip enable (CE#) and output enable (OE#) inputs are activated, the device can read or write data based on the address inputs (A0-A19) and data inputs/outputs (DQ0-DQ15).

Detailed Application Field Plans

The IDT71V416YS15Y is commonly used in applications that require high-speed and low-power memory, such as:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment: Provides fast data buffering and storage capabilities in routers, switches, and network appliances.
3. Telecommunications devices: Used for data storage and retrieval in communication systems, base stations, and voice/data routers.
4. Industrial automation: Enables quick data processing and storage in control systems, PLCs, and robotics.
5. Automotive electronics: Used in advanced driver assistance systems (ADAS), infotainment systems, and engine control units (ECUs).

Detailed and Complete Alternative Models

1. IDT71V416L: Similar specifications but with lower power consumption.
2. IDT71V424: Higher storage capacity (4 Meg x 24) with slightly slower access time.
3. IDT71V432: Higher storage capacity (4 Meg x 32) with similar access time.

(Note: The list of alternative models can be expanded based on the specific requirements and availability in the market.)

This encyclopedia entry provides an overview of the IDT71V416YS15Y, a high-speed synchronous SRAM. It includes information about its product category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.