IDT71V424L10Y

Product Overview

Category

The IDT71V424L10Y belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This chip is primarily used for high-speed data storage and retrieval in various electronic devices.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Reliable performance
• Wide temperature range compatibility

Package

The IDT71V424L10Y is available in a compact and industry-standard 44-pin TSOP (Thin Small Outline Package).

Essence

The essence of the IDT71V424L10Y lies in its ability to provide fast and reliable data storage and retrieval, making it suitable for applications that require high-speed processing.

Packaging/Quantity

The IDT71V424L10Y is typically packaged in reels or trays, with each reel containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Organization: 4 Meg x 4
• Voltage Range: 3.0V - 3.6V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 5 mA (max)
• Package Type: 44-pin TSOP

Detailed Pin Configuration

The IDT71V424L10Y has a total of 44 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE1
19. /CE2
20. /OE
21. /WE
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. I/O8
31. I/O9
32. I/O10
33. I/O11
34. I/O12
35. I/O13
36. I/O14
37. I/O15
38. Vss
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Non-volatile memory retains data even when power is disconnected
• Reliable performance in a wide temperature range

Advantages and Disadvantages

Advantages

• Fast operation for quick data processing
• Low power consumption, making it suitable for battery-powered devices
• Non-volatile memory ensures data retention without the need for constant power supply
• Reliable performance in various environmental conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to alternative memory options

Working Principles

The IDT71V424L10Y operates based on the principles of static random access memory. It stores data in a matrix of memory cells, each consisting of a flip-flop circuit. The stored data can be accessed and retrieved at high speeds by providing the appropriate address signals.

Detailed Application Field Plans

The IDT71V424L10Y finds applications in various electronic devices that require high-speed data storage and retrieval. Some potential application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Medical equipment
6. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V424S10Y: Similar to the IDT71V424L10Y, but with a faster access time of 10 ns.
2. IDT71V416L10Y: A lower capacity variant with 4 Meg x 16 organization.
3. IDT71V432S10Y: Higher capacity variant with 8 Meg x 4 organization and a faster access time of 10 ns.

These alternative models offer different specifications and capacities to cater to specific application requirements.

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