IDT71V424S10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Static Random Access Memory (SRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Type: SRAM
• Organization: 4 Meg x 4
• Voltage Supply: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IDT71V424S10Y8 has a total of 32 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /WE (Write Enable)
19. /OE (Output Enable)
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. GND
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11

Functional Features

• High-speed operation allows for quick data access.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity of 4 Meg x 4 provides ample memory space.
• SRAM technology ensures data retention even without power.

Advantages and Disadvantages

Advantages: - High-speed performance enables fast data access. - Low power consumption prolongs battery life. - Large storage capacity accommodates extensive data requirements. - SRAM technology ensures data integrity.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Volatile memory requires constant power supply for data retention.

Working Principles

The IDT71V424S10Y8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a 4 Meg x 4 configuration, allowing for efficient storage and retrieval of data. The device operates at a voltage supply of 3.3V and has an access time of 10 ns, ensuring quick data access.

Detailed Application Field Plans

The IDT71V424S10Y8 is commonly used in various electronic systems that require high-speed and low-power memory. Some application fields include:

1. Embedded Systems: Used in microcontrollers and digital signal processors for data storage and processing.
2. Networking Equipment: Employed in routers, switches, and network cards for buffering and caching data.
3. Telecommunications: Utilized in base stations, modems, and communication devices for storing temporary data.
4. Industrial Automation: Integrated into control systems and PLCs for storing program instructions and data.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices for data storage and retrieval.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10
2. Micron MT48LC4M16A2TG-75
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-7SI

These alternative models offer similar specifications and functionality to the IDT71V424S10Y8, providing options for different sourcing and pricing considerations.

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