IDT71V424YS12Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory
• Packaging/Quantity: Tape and reel, 1000 units per reel

Specifications

• Manufacturer: Integrated Device Technology (IDT)
• Model: IDT71V424YS12Y
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (4M) x 4
• Operating Voltage: 3.3V
• Access Time: 12 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 32 pins

Detailed Pin Configuration

The IDT71V424YS12Y has a total of 32 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. A0-A21 - Address inputs
3. DQ0-DQ3 - Data inputs/outputs
4. WE - Write enable input
5. OE - Output enable input
6. CE - Chip enable input
7. UB/LB - Upper byte/lower byte control input
8. NC - No connection
9. GND - Ground

Functional Features

• High-speed access: The IDT71V424YS12Y offers fast access times, allowing for quick retrieval and storage of data.
• Low power consumption: This memory device is designed to operate efficiently with minimal power consumption, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 4 Megabits, the IDT71V424YS12Y can store a significant amount of data.
• Reliable operation: The SRAM technology used in this device ensures reliable and stable performance.

Advantages and Disadvantages

Advantages: - High-speed performance enables fast data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data storage needs. - Reliable operation ensures consistent performance.

Disadvantages: - Limited storage capacity compared to other memory technologies like Flash or DRAM. - Volatile memory requires constant power supply to retain data.

Working Principles

The IDT71V424YS12Y is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. When an address is provided, the corresponding data can be read from or written to the memory cells. The chip enable (CE), write enable (WE), and output enable (OE) inputs control the memory operations.

Detailed Application Field Plans

The IDT71V424YS12Y is commonly used in various electronic systems that require high-speed and reliable memory storage. Some application fields include:

1. Computer Systems: Used as cache memory or for storing critical system data.
2. Networking Equipment: Provides temporary storage for packet buffering and routing tables.
3. Telecommunications Devices: Utilized for call processing, voice/data buffering, and protocol handling.
4. Industrial Control Systems: Stores program code, configuration data, and real-time data logging.
5. Automotive Electronics: Used in engine control units, infotainment systems, and advanced driver-assistance systems.

Detailed and Complete Alternative Models

1. IDT71V416S - 4 Megabit (4M) x 16 SRAM
2. IDT71V424L - 4 Megabit (4M) x 4 Low-power SRAM
3. IDT71V424S - 4 Megabit (4M) x 4 SRAM with synchronous interface
4. IDT71V424 - 4 Megabit (4M) x 4 SRAM with separate I/Os

These alternative models offer similar functionality and can be considered as alternatives to the IDT71V424YS12Y based on specific requirements.

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