IDT71V632S6PFI8

Product Overview

Category

The IDT71V632S6PFI8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact package size

Package

The IDT71V632S6PFI8 is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of the IDT71V632S6PFI8 lies in its ability to provide fast and reliable data storage and retrieval capabilities.

Packaging/Quantity

This product is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 64K words x 32 bits
• Operating Voltage: 3.3V
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100 pins
• Data Retention: Greater than 10 years

Detailed Pin Configuration

The IDT71V632S6PFI8 has a total of 100 pins, each serving a specific function. The pin configuration is as follows:

1. VCC
2. GND
3. A0-A15 (Address Inputs)
4. DQ0-DQ31 (Data Inputs/Outputs)
5. WE (Write Enable)
6. OE (Output Enable)
7. CE (Chip Enable)
8. UB/LB (Upper Byte/Lower Byte Control)
9. CLK (Clock Input)
10. RAS (Row Address Strobe)
11. CAS (Column Address Strobe)

(Note: This is just a partial list of pins for illustrative purposes.)

Functional Features

• High-speed access: The IDT71V632S6PFI8 offers fast data access times, enabling efficient data processing in electronic systems.
• Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable performance: The SRAM technology used in this device ensures reliable operation and data integrity.
• Easy integration: The compact package and standard pin configuration facilitate easy integration into various electronic systems.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption prolongs battery life.
• Reliable performance ensures data integrity.
• Compact package size allows for space-efficient designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory requires constant power supply to retain data.

Working Principles

The IDT71V632S6PFI8 utilizes static random access memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. When an address is provided, the corresponding data is accessed directly without the need for refreshing cycles. This enables fast and random access to stored information.

Detailed Application Field Plans

The IDT71V632S6PFI8 finds applications in various electronic systems, including but not limited to:

1. Embedded systems
2. Networking equipment
3. Communication devices
4. Industrial automation
5. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V632S6PF
2. IDT71V632S6PFG
3. IDT71V632S6PFI
4. IDT71V632S6PFIG

(Note: This is just a sample list of alternative models. Please refer to the manufacturer's documentation for a complete list.)

In conclusion, the IDT71V632S6PFI8 is a high-speed, low-power static random access memory (SRAM) device. It offers reliable performance and compact packaging, making it suitable for various electronic applications. While it has limitations in terms of storage capacity and volatility, its advantages outweigh these disadvantages.