IDT71V65602S150PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: 100-pin TQFP (Thin Quad Flat Package)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Density: 4 Megabits (256K x 16)
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Parallel
• Organization: 256K words x 16 bits
• Clock Frequency: Up to 150 MHz
• Power Supply Current: 80 mA (typical)

Pin Configuration (Top View)

___________ | | A0 |1 48| VCC A1 |2 47| A18 A2 |3 46| A17 A3 |4 45| A16 A4 |5 44| A15 A5 |6 43| A14 A6 |7 42| A13 A7 |8 41| A12 A8 |9 40| A11 A9 |10 39| A10 A10 |11 38| A9 A11 |12 37| A8 A12 |13 36| A7 A13 |14 35| A6 A14 |15 34| A5 A15 |16 33| A4 A16 |17 32| A3 A17 |18 31| A2 A18 |19 30| A1 DQ |20 29| A0 DQ |21 28| WE# DQ |22 27| OE# DQ |23 26| CE# DQ |24 25| GND |___________|

Functional Features

• High-speed operation with a clock frequency of up to 150 MHz
• Low-power consumption for efficient energy usage
• Synchronous interface for easy integration into various systems
• Reliable data retention for more than 10 years
• Parallel organization for efficient data access

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Low-power consumption helps in reducing overall system energy usage - Synchronous interface simplifies system integration - Reliable data retention ensures data integrity over long periods - Parallel organization enables efficient data handling

Disadvantages: - Limited memory density compared to other memory technologies - Higher cost per bit compared to some alternative memory options - Requires additional control signals for proper operation

Working Principles

The IDT71V65602S150PF is a synchronous SRAM that stores data using flip-flops. It operates synchronously with an external clock signal, allowing for precise timing and high-speed data access. The memory cells are organized in a parallel structure, with each cell storing 16 bits of data. The device requires specific control signals (CE#, OE#, WE#) to read from or write to the memory. The data is accessed through the address lines (A0-A18), and the output is available on the DQ pins.

Application Field Plans

The IDT71V65602S150PF is widely used in various electronic systems that require high-speed and reliable memory storage. Some of its application fields include:

1. Telecommunications: Used in networking equipment, routers, and switches for fast data buffering.
2. Industrial Automation: Utilized in control systems, PLCs (Programmable Logic Controllers), and robotics for efficient data handling.
3. Automotive Electronics: Integrated into automotive control units, infotainment systems, and driver assistance systems for quick data access.
4. Medical Devices: Employed in medical imaging equipment, patient monitoring systems, and diagnostic devices for storing critical data.
5. Consumer Electronics: Found in gaming consoles, digital cameras, and portable media players for rapid data retrieval.

Alternative Models

• IDT71V65603S150PF: Similar to IDT71V65602S150PF but with higher density (8 Megabits).
• **IDT71V