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IDT71V65802S100PFG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous SRAM
- Package: 100-pin Fine-Pitch Ball Grid Array (FBGA)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Type: Synchronous Static Random Access Memory (SRAM)
- Density: 2 Megabits (256K x 8)
- Operating Voltage: 3.3V
- Access Time: 10 ns
- Clock Frequency: 100 MHz
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 20 years
- Interface: Parallel
Detailed Pin Configuration
The IDT71V65802S100PFG8 has a total of 100 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- VDDQ
Functional Features
- High-speed operation with a clock frequency of 100 MHz
- Low-power consumption for energy-efficient applications
- Synchronous interface for easy integration with other components
- Reliable data storage and retrieval capabilities
- Wide operating temperature range for versatile usage scenarios
Advantages and Disadvantages
Advantages: - High-speed operation allows for quick data access - Low-power consumption helps conserve energy - Synchronous interface simplifies system design and integration - Reliable data retention ensures data integrity - Wide operating temperature range enables usage in various environments
Disadvantages: - Limited memory density compared to newer memory technologies - Parallel interface may not be suitable for all applications - Higher cost compared to some alternative memory solutions
Working Principles
The IDT71V65802S100PFG8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates synchronously with an external clock signal, allowing for precise timing and high-speed data access. The memory cells are organized into a 256K x 8 configuration, providing a total memory capacity of 2 Megabits. The device operates at a voltage of 3.3V and has an access time of 10 ns, ensuring fast and efficient data transfer.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V65802S100PFG8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V65802S100PFG8 in technical solutions:
Question: What is the IDT71V65802S100PFG8?
Answer: The IDT71V65802S100PFG8 is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 256K x 36 bits.Question: What are the key features of the IDT71V65802S100PFG8?
Answer: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.Question: What is the typical application of the IDT71V65802S100PFG8?
Answer: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other applications that require high-speed data storage.Question: What is the operating voltage range for the IDT71V65802S100PFG8?
Answer: The operating voltage range is typically between 3.0V and 3.6V.Question: What is the maximum clock frequency supported by this SRAM?
Answer: The IDT71V65802S100PFG8 can support a maximum clock frequency of 100 MHz.Question: Does this SRAM have any power-saving features?
Answer: Yes, it has a deep power-down mode that reduces power consumption when the device is not actively being accessed.Question: Can I use multiple IDT71V65802S100PFG8 devices in parallel to increase memory capacity?
Answer: Yes, you can use multiple devices in parallel to increase the overall memory capacity.Question: What is the data retention time for this SRAM?
Answer: The IDT71V65802S100PFG8 has a data retention time of at least 10 years.Question: Does this SRAM support burst mode operations?
Answer: Yes, it supports burst read and write operations, which can improve overall system performance.Question: Is the IDT71V65802S100PFG8 compatible with other standard memory interfaces?
Answer: Yes, it is designed to be compatible with industry-standard synchronous SRAM interfaces, making it easy to integrate into existing systems.
Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.