IDT71V65802S133BQ

Product Overview

Category

The IDT71V65802S133BQ belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into circuit designs

Package

The IDT71V65802S133BQ is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage capabilities for electronic devices.

Packaging/Quantity

The IDT71V65802S133BQ is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 44 pins

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /WE
19. /OE
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. GND
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into existing circuit designs
• Reliable data retention even in harsh environmental conditions
• Compatibility with various electronic devices and systems

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing
• Low power consumption helps to prolong battery life in portable devices
• Reliable data retention ensures the integrity of stored information
• Easy integration simplifies the design process for electronic devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to some alternative memory solutions
• Sensitivity to external factors such as electromagnetic interference (EMI)

Working Principles

The IDT71V65802S133BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the IC are organized in a matrix, allowing for fast and direct access to specific data locations.

Detailed Application Field Plans

The IDT71V65802S133BQ finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10
2. Micron MT48LC4M16A2TG-75
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI

These alternative models offer similar functionality and specifications to the IDT71V65802S133BQ, providing options for designers and manufacturers based on their specific requirements.

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