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IDT71V67602S166BQ

IDT71V67602S166BQ

Product Overview

Category

The IDT71V67602S166BQ belongs to the category of integrated circuits (ICs).

Use

This IC is primarily used in electronic devices for memory storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Package

The IDT71V67602S166BQ comes in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage capabilities for electronic devices.

Packaging/Quantity

The IDT71V67602S166BQ is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 8 Meg x 16
  • Supply Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 48
  • Data Retention: 10 years

Detailed Pin Configuration

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. WE#
  12. CAS#
  13. RAS#
  14. OE#
  15. A0
  16. A1
  17. A2
  18. A3
  19. A4
  20. A5
  21. A6
  22. A7
  23. A8
  24. A9
  25. A10
  26. A11
  27. A12
  28. A13
  29. A14
  30. A15
  31. VDDQ
  32. DQ15
  33. DQ14
  34. DQ13
  35. DQ12
  36. DQ11
  37. DQ10
  38. DQ9
  39. DQ8
  40. VSSQ
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during standby mode
  • Easy integration with various electronic devices
  • Reliable performance in harsh operating conditions

Advantages and Disadvantages

Advantages

  • Fast data access time
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability for higher storage capacities

Working Principles

The IDT71V67602S166BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC uses a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V67602S166BQ finds applications in various electronic devices, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Industrial control systems

Detailed and Complete Alternative Models

  1. Micron MT48LC16M16A2P-75
  2. Samsung K6R4016V1D-UI10
  3. Cypress CY62157EV30LL-45ZSXI

These alternative models offer similar specifications and functionality to the IDT71V67602S166BQ, providing users with options based on their specific requirements.

In conclusion, the IDT71V67602S166BQ is a high-performance SRAM IC that offers fast data access, large storage capacity, and low power consumption. Its reliable operation makes it suitable for various electronic devices in different application fields. While it may have some disadvantages such as higher cost and limited scalability, there are alternative models available to cater to different needs.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V67602S166BQ en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V67602S166BQ in technical solutions:

  1. Question: What is the IDT71V67602S166BQ?
    Answer: The IDT71V67602S166BQ is a high-speed synchronous static RAM (SRAM) with a capacity of 16 Megabits (2 Megabytes).

  2. Question: What is the operating voltage range for this SRAM?
    Answer: The IDT71V67602S166BQ operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this SRAM?
    Answer: This SRAM supports a maximum clock frequency of 166 MHz.

  4. Question: Can I use this SRAM in battery-powered devices?
    Answer: Yes, the IDT71V67602S166BQ has low power consumption and can be used in battery-powered devices.

  5. Question: What is the access time of this SRAM?
    Answer: The access time of this SRAM is 10 ns.

  6. Question: Does this SRAM support burst mode operation?
    Answer: Yes, the IDT71V67602S166BQ supports burst mode operation with a burst length of 1, 2, 4, or 8.

  7. Question: Can I interface this SRAM with a microcontroller or FPGA?
    Answer: Yes, this SRAM can be easily interfaced with microcontrollers, FPGAs, and other digital systems.

  8. Question: What is the package type for this SRAM?
    Answer: The IDT71V67602S166BQ is available in a 165-ball BGA package.

  9. Question: Does this SRAM have any built-in error correction capabilities?
    Answer: No, this SRAM does not have built-in error correction capabilities.

  10. Question: Can I use multiple IDT71V67602S166BQ SRAMs in parallel to increase the memory capacity?
    Answer: Yes, you can use multiple SRAMs in parallel to increase the overall memory capacity in your system.

Please note that these answers are general and may vary depending on the specific application and requirements.