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IPB042N10N3GATMA1
Product Overview
Category
The IPB042N10N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switch in various electronic circuits and power applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Package
The IPB042N10N3GATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 42A
- On-State Resistance (RDS(on)): 4.2mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 50nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB042N10N3GATMA1 follows the standard pin configuration for a power MOSFET: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)
Functional Features
- High current-handling capacity
- Low conduction losses
- Enhanced thermal performance
- Compatibility with various driving circuits
Advantages and Disadvantages
Advantages
- Efficient power handling
- Reduced heat dissipation
- Fast switching capabilities
- Wide operating temperature range
Disadvantages
- Sensitivity to static electricity
- Potential for gate oxide damage if mishandled
Working Principles
The IPB042N10N3GATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the semiconductor material.
Detailed Application Field Plans
The IPB042N10N3GATMA1 finds extensive use in the following application fields: - Switch-mode power supplies - Motor control systems - Battery management - LED lighting - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IPB042N10N3GATMA1 include: - IPB041N04N3 G - IPB040N06N3 G - IPB039N15N3 G - IPB038N12N3 G
In conclusion, the IPB042N10N3GATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power applications, making it an essential component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB042N10N3GATMA1 en soluciones técnicas
Question: What is the maximum drain-source voltage for IPB042N10N3GATMA1?
Answer: The maximum drain-source voltage for IPB042N10N3GATMA1 is 100V.Question: What is the continuous drain current rating of IPB042N10N3GATMA1?
Answer: The continuous drain current rating of IPB042N10N3GATMA1 is 42A.Question: Can IPB042N10N3GATMA1 be used in automotive applications?
Answer: Yes, IPB042N10N3GATMA1 is suitable for automotive applications.Question: What is the typical on-resistance of IPB042N10N3GATMA1?
Answer: The typical on-resistance of IPB042N10N3GATMA1 is 4.2mΩ.Question: Is IPB042N10N3GATMA1 suitable for use in power management systems?
Answer: Yes, IPB042N10N3GATMA1 is well-suited for power management systems.Question: What is the operating temperature range of IPB042N10N3GATMA1?
Answer: IPB042N10N3GATMA1 has an operating temperature range of -55°C to 175°C.Question: Does IPB042N10N3GATMA1 require a heat sink for high-power applications?
Answer: Yes, a heat sink is recommended for high-power applications to ensure optimal thermal performance.Question: Can IPB042N10N3GATMA1 be used in switching power supplies?
Answer: Yes, IPB042N10N3GATMA1 is suitable for use in switching power supplies.Question: What package type does IPB042N10N3GATMA1 come in?
Answer: IPB042N10N3GATMA1 is available in a TO-263 package.Question: Is IPB042N10N3GATMA1 RoHS compliant?
Answer: Yes, IPB042N10N3GATMA1 is RoHS compliant, making it environmentally friendly.