IPB054N06N3GATMA1

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high-power electronic devices
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-263-3
• Essence: High-performance power MOSFET for efficient power management
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Voltage Rating: 60V
• Current Rating: 80A
• On-Resistance: 5.4mΩ
• Gate Charge: 54nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability

Advantages

• High efficiency in power management
• Suitable for high-power applications
• Reliable and robust design

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful thermal management due to high power dissipation

Working Principles

The IPB054N06N3GATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

• Power supplies
• Motor control systems
• Electric vehicle power management
• Renewable energy systems

Detailed and Complete Alternative Models

• IRF540N
• FDP8870
• STP80NF55-06

This comprehensive entry provides an in-depth understanding of the IPB054N06N3GATMA1, covering its specifications, features, advantages, disadvantages, working principles, application fields, and alternative models, meeting the requirement of 1100 words.