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IPB054N08N3GATMA1
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IPB054N08N3GATMA1

Product Overview

Category

The IPB054N08N3GATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic applications, including power supplies, motor control, and automotive systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB054N08N3GATMA1 is available in a TO-263 package.

Essence

This MOSFET is designed to provide efficient power management and control in different electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 54A
  • RDS(ON) (Max) @ VGS = 10V: 5.8 mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB054N08N3GATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current-carrying capability for robust performance
  • Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance leading to reduced power losses
  • Fast switching speed enabling high-frequency operation

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited operating temperature range

Working Principles

The IPB054N08N3GATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for use in: - Power supply units - Motor control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to consider include: - IPB054N08N3 - IPB054N08N3G

In conclusion, the IPB054N08N3GATMA1 is a high-performance power MOSFET with excellent characteristics for various electronic applications, despite its limitations in certain operating conditions.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB054N08N3GATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPB054N08N3GATMA1?

    • The maximum drain-source voltage of IPB054N08N3GATMA1 is 80V.

  2. What is the continuous drain current rating of IPB054N08N3GATMA1?

    • The continuous drain current rating of IPB054N08N3GATMA1 is 54A.

  3. What is the on-resistance of IPB054N08N3GATMA1?

    • The on-resistance of IPB054N08N3GATMA1 is typically 8mΩ at Vgs=10V.

  4. What is the gate threshold voltage of IPB054N08N3GATMA1?

    • The gate threshold voltage of IPB054N08N3GATMA1 is typically 2V.

  5. What is the power dissipation of IPB054N08N3GATMA1?

    • The power dissipation of IPB054N08N3GATMA1 is 200W.

  6. What are the typical applications for IPB054N08N3GATMA1?

    • IPB054N08N3GATMA1 is commonly used in motor control, battery protection, and power management applications.

  7. What is the operating temperature range of IPB054N08N3GATMA1?

    • The operating temperature range of IPB054N08N3GATMA1 is -55°C to 175°C.

  8. Does IPB054N08N3GATMA1 have built-in ESD protection?

    • Yes, IPB054N08N3GATMA1 has built-in ESD protection.

  9. What package type does IPB054N08N3GATMA1 come in?

    • IPB054N08N3GATMA1 comes in a TO-263-7 package.

  10. Is IPB054N08N3GATMA1 RoHS compliant?

    • Yes, IPB054N08N3GATMA1 is RoHS compliant.