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IPB120N03S4L03ATMA1
Product Overview
Category
The IPB120N03S4L03ATMA1 belongs to the category of power MOSFETs.
Use
It is commonly used for high-power switching applications in various electronic devices and systems.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPB120N03S4L03ATMA1 is typically available in a TO-263 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 120A
- On-State Resistance (RDS(on)): 3.4mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB120N03S4L03ATMA1 features a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Suitable for high-frequency applications
- Enhanced thermal performance
Advantages
- Efficient power dissipation
- Reduced heat generation
- Improved system reliability
- Enhanced circuit efficiency
- Suitable for demanding industrial and automotive applications
Disadvantages
- Higher cost compared to traditional power transistors
- Sensitive to electrostatic discharge (ESD)
- Requires careful handling during assembly and soldering
Working Principles
The IPB120N03S4L03ATMA1 operates based on the principles of field-effect transistor (FET) technology, utilizing its low on-state resistance and fast switching speed to control the flow of power in electronic circuits.
Detailed Application Field Plans
The IPB120N03S4L03ATMA1 is widely used in the following applications: - Motor control systems - Power supplies - DC-DC converters - Inverters - Battery management systems - Automotive electronic control units (ECUs)
Detailed and Complete Alternative Models
Some alternative models to the IPB120N03S4L03ATMA1 include: - IPB120N03LG - IPB120N03L - IPB120N03T - IPB120N03S4-07
In conclusion, the IPB120N03S4L03ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of high-power switching applications, making it an essential component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB120N03S4L03ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB120N03S4L03ATMA1?
- The maximum drain-source voltage of IPB120N03S4L03ATMA1 is 30V.
What is the continuous drain current rating of IPB120N03S4L03ATMA1?
- The continuous drain current rating of IPB120N03S4L03ATMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPB120N03S4L03ATMA1?
- The on-state resistance (RDS(on)) of IPB120N03S4L03ATMA1 is typically 3.4mΩ at VGS = 10V.
Can IPB120N03S4L03ATMA1 be used in automotive applications?
- Yes, IPB120N03S4L03ATMA1 is suitable for automotive applications.
What is the operating temperature range of IPB120N03S4L03ATMA1?
- The operating temperature range of IPB120N03S4L03ATMA1 is -55°C to 175°C.
Does IPB120N03S4L03ATMA1 have built-in ESD protection?
- Yes, IPB120N03S4L03ATMA1 features built-in ESD protection.
Is IPB120N03S4L03ATMA1 RoHS compliant?
- Yes, IPB120N03S4L03ATMA1 is RoHS compliant.
What package type does IPB120N03S4L03ATMA1 come in?
- IPB120N03S4L03ATMA1 is available in a TO-263-7 package.
What gate-source voltage is required to fully enhance IPB120N03S4L03ATMA1?
- A gate-source voltage of 10V is typically required to fully enhance IPB120N03S4L03ATMA1.
Can IPB120N03S4L03ATMA1 be used in high-power switching applications?
- Yes, IPB120N03S4L03ATMA1 is suitable for high-power switching applications.