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IPB65R099C6ATMA1
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IPB65R099C6ATMA1

Product Overview

Category

The IPB65R099C6ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB65R099C6ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels with a quantity per reel varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 6.5A
  • On-Resistance (RDS(on)): 0.99Ω
  • Power Dissipation (PD): 48W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPB65R099C6ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages

  • Suitable for high voltage applications
  • Low power dissipation
  • Fast switching speed

Disadvantages

  • Limited continuous drain current compared to higher-rated MOSFETs
  • Higher on-resistance compared to some specialized MOSFETs

Working Principles

The IPB65R099C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - LED lighting - Solar inverters - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPB65R099C6ATMA1 include: - IPB60R099CP - IPB65R190CFD - IPB65R190C6

In conclusion, the IPB65R099C6ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications requiring efficient power management.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB65R099C6ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPB65R099C6ATMA1?

    • The maximum drain-source voltage of IPB65R099C6ATMA1 is 650V.

  2. What is the continuous drain current of IPB65R099C6ATMA1?

    • The continuous drain current of IPB65R099C6ATMA1 is 65A.

  3. What is the on-resistance of IPB65R099C6ATMA1?

    • The on-resistance of IPB65R099C6ATMA1 is typically 99mΩ at Vgs = 10V.

  4. What is the gate threshold voltage of IPB65R099C6ATMA1?

    • The gate threshold voltage of IPB65R099C6ATMA1 is typically 2.5V.

  5. What are the typical applications for IPB65R099C6ATMA1?

    • IPB65R099C6ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  6. What is the operating temperature range of IPB65R099C6ATMA1?

    • The operating temperature range of IPB65R099C6ATMA1 is -55°C to 150°C.

  7. Does IPB65R099C6ATMA1 have built-in protection features?

    • Yes, IPB65R099C6ATMA1 has built-in overcurrent protection and thermal shutdown features.

  8. What is the package type of IPB65R099C6ATMA1?

    • IPB65R099C6ATMA1 is available in a TO-263-7 package.

  9. Is IPB65R099C6ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB65R099C6ATMA1 is suitable for high-frequency switching due to its low on-resistance.

  10. Are there any recommended external components to use with IPB65R099C6ATMA1?

    • It is recommended to use appropriate gate drivers and snubber circuits when integrating IPB65R099C6ATMA1 into a design for optimal performance and reliability.