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IPB70N10SL16ATMA1
Product Overview
Category
The IPB70N10SL16ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
Package
The IPB70N10SL16ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with a quantity varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 70A
- On-Resistance (RDS(on)): 0.016Ω
- Power Dissipation (PD): 200W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB70N10SL16ATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge facilitates quick and precise gate control.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- May require additional circuitry for optimal performance in some applications
Working Principles
The IPB70N10SL16ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB70N10SL16ATMA1 is widely used in: - Switching power supplies - Motor control systems - Inverters - DC-DC converters - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB70N10SL16ATMA1 include: - IPB60R190C6 - IPP60R190C6 - IRFB7434PbF - IRFB7440PbF - FDPF33N25T
In conclusion, the IPB70N10SL16ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of high-power switching applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB70N10SL16ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB70N10SL16ATMA1?
- The maximum drain-source voltage of IPB70N10SL16ATMA1 is 100V.
What is the continuous drain current rating of IPB70N10SL16ATMA1?
- The continuous drain current rating of IPB70N10SL16ATMA1 is 70A.
What is the on-resistance of IPB70N10SL16ATMA1?
- The on-resistance of IPB70N10SL16ATMA1 is typically 0.01 ohms.
What is the gate threshold voltage of IPB70N10SL16ATMA1?
- The gate threshold voltage of IPB70N10SL16ATMA1 is typically 2.5V.
What is the power dissipation of IPB70N10SL16ATMA1?
- The power dissipation of IPB70N10SL16ATMA1 is 300W.
What are the typical applications for IPB70N10SL16ATMA1?
- IPB70N10SL16ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
Is IPB70N10SL16ATMA1 suitable for high-frequency switching applications?
- Yes, IPB70N10SL16ATMA1 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
Does IPB70N10SL16ATMA1 have built-in protection features?
- IPB70N10SL16ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of IPB70N10SL16ATMA1?
- The operating temperature range of IPB70N10SL16ATMA1 is -55°C to 175°C.
Is IPB70N10SL16ATMA1 RoHS compliant?
- Yes, IPB70N10SL16ATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.