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IPD135N08N3GATMA1
Product Overview
Category
The IPD135N08N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Enhanced thermal performance
Package
The IPD135N08N3GATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 135A
- RDS(ON) (Max) @ VGS = 10V: 1.8mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 150nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD135N08N3GATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low conduction losses
- High efficiency
- Suitable for high-frequency applications
- Enhanced ruggedness and reliability
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-state resistance leading to reduced power dissipation
- Fast switching speed enabling efficient power control
Disadvantages
- Higher gate capacitance may require careful driver design for optimal performance
- Sensitivity to static electricity and overvoltage conditions
Working Principles
The IPD135N08N3GATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents in electronic circuits.
Detailed Application Field Plans
The IPD135N08N3GATMA1 finds extensive use in various applications including: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPD135N08N3GATMA1 include: - IRF1405PbF - FDP8870 - AUIRFN8409
In conclusion, the IPD135N08N3GATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications across diverse industries.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD135N08N3GATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD135N08N3GATMA1?
- The maximum drain-source voltage of IPD135N08N3GATMA1 is 80V.
What is the continuous drain current rating of IPD135N08N3GATMA1?
- The continuous drain current rating of IPD135N08N3GATMA1 is 135A.
What is the on-resistance of IPD135N08N3GATMA1?
- The on-resistance of IPD135N08N3GATMA1 is typically 4.5mΩ at Vgs=10V.
What is the gate threshold voltage of IPD135N08N3GATMA1?
- The gate threshold voltage of IPD135N08N3GATMA1 is typically 2.5V.
What is the power dissipation of IPD135N08N3GATMA1?
- The power dissipation of IPD135N08N3GATMA1 is 625W.
What are the typical applications for IPD135N08N3GATMA1?
- IPD135N08N3GATMA1 is commonly used in high-current, high-frequency switching applications such as motor control, power supplies, and inverters.
What is the operating temperature range of IPD135N08N3GATMA1?
- The operating temperature range of IPD135N08N3GATMA1 is -55°C to 175°C.
Does IPD135N08N3GATMA1 have built-in protection features?
- Yes, IPD135N08N3GATMA1 has built-in overcurrent protection and thermal shutdown features.
What is the package type of IPD135N08N3GATMA1?
- IPD135N08N3GATMA1 comes in a TO-252-3 package.
Is IPD135N08N3GATMA1 RoHS compliant?
- Yes, IPD135N08N3GATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.